參數(shù)資料
型號(hào)： ITC1100
英文描述： BJT
中文描述： 雙極型晶體管
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 130K
代理商： ITC1100
R.1.120799
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT
WWW.GHZ.COM
OR CONTACT OUR FACTORY DIRECT.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
ITC1100
1000 WATT, 50V, Pulsed
Avionics 1030 MHz
GENERAL DESCRIPTION
The
ITC1100
is a common base bipolar transistor. It is designed for pulsed
interrogator systems in the frequency band of 1030 MHz. The device has gold
thin-film metallization for proven high MTTF. The transistor includes input
returns for improved output rise time . Low thermal resistance package reduces
junction temperature which extends the life time of the product.
CASE OUTLINE
55SW, Style 1
Common Base
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation
1
@25
°
C (P
d
)
Thermal Resistance
1
(
θ
JC
)
Voltage and Current
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
1
Temperatures
Storage Temperature
Operating Junction Temperature
1
3400 W
.08
°
C/W
65V
3.5V
80A
-40 to +150
°
C
+200
°
C
ELECTRICAL CHARACTERISTICS @ 25
°
C
SYMBOL
CHARACTERISTICS
TEST
CONDITIONS
MIN
TYP
MAX
UNITS
BVebo
2
BVces
BVceo
2
h
FE
Emitter-Base Breakdown(open)
Ie=50mA
3.5
65
30
20
V
V
V
β
Collector-Emitter Breakdown(shorted)
Ic=30mA
Collector-Emitter Breakdown (open)
Ic=30mA
2
DC Current Gain
Ic=5A, Vce=5V
100
FUNCTIONAL CHARACTERISTICS @ 25
°
C
G
PB
Common Base Power Gain
V
cc
= 50V, F = 1030MHz,
P
out
=1000W Peak Min, PW=1
μ
S, DF=1%
V
cc
= 50V, F = 1030MHz,
P
out
=1000W Peak Min, PW=1
μ
S, DF=1%
V
cc
= 50V, F = 1030MHz,
P
out
=1000W Peak Min, PW=1
μ
S, DF=1%
V
cc
= 50V, F = 1030MHz,
P
out
=1000W Peak Min, PW=1
μ
S, DF=1%
V
cc
= 50V, F = 1030MHz,
P
out
=1000W Peak Min, PW=1
μ
S, DF=1%
V
cc
= 50V, F = 1030MHz,
P
out
=1000W Peak Min, PW=1
μ
S, DF=1%
10
10.5
dB
η
c
Collector Efficiency
45
50
%
t
r
Rise Time
50
80
nS
VSWR
Output Load Mismatch
4:1
Ψ
Z
in
Series Input Impedance (Circuit
source impedance @ test cond.)
0.89 – j2.3
Z
out
Series Output Impedance (Circuit
load impedance @ test cond.)
0.54 - j2.64
1
At rated output power and pulse conditions
2
Not measurable due to EB Returns
相關(guān)PDF資料
PDF描述
ITC117PTR FET-OUTPUT OPTOCOUPLER
ITC135PTR FET-OUTPUT OPTOCOUPLER
ITC14407516D TRANSISTOR | IGBT | N-CHAN | 1.6KV V(BR)CES | 75A I(C) | CHIP
ITC14410012D TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 100A I(C) | CHIP
ITC14415006D TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 150A I(C) | CHIP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ITC117 制造商:CLARE 制造商全稱(chēng):Clare, Inc. 功能描述:Integrated Telecom Circuits
ITC117P 功能描述:固態(tài)繼電器-PCB安裝 Integrated RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負(fù)載電壓額定值:40 V 負(fù)載電流額定值:120 mA 觸點(diǎn)形式:1 Form A (SPST-NO) 輸出設(shè)備:MOSFET 封裝 / 箱體:USOP-4 安裝風(fēng)格:SMD/SMT
ITC117P_12 制造商:IXYS 制造商全稱(chēng):IXYS Corporation 功能描述:Integrated Telecom Circuits
ITC117PL 功能描述:固態(tài)繼電器-PCB安裝 Integrated RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負(fù)載電壓額定值:40 V 負(fù)載電流額定值:120 mA 觸點(diǎn)形式:1 Form A (SPST-NO) 輸出設(shè)備:MOSFET 封裝 / 箱體:USOP-4 安裝風(fēng)格:SMD/SMT
ITC117PLTR 功能描述:固態(tài)繼電器-PCB安裝 Integrated RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負(fù)載電壓額定值:40 V 負(fù)載電流額定值:120 mA 觸點(diǎn)形式:1 Form A (SPST-NO) 輸出設(shè)備:MOSFET 封裝 / 箱體:USOP-4 安裝風(fēng)格:SMD/SMT
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*