參數(shù)資料
型號(hào)： ITC117PTR
英文描述： FET-OUTPUT OPTOCOUPLER
中文描述： 場(chǎng)效應(yīng)管輸出光耦合器
文件頁數(shù)： 1/2頁
文件大?。?/td> 130K
代理商： ITC117PTR
R.1.120799
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT
WWW.GHZ.COM
OR CONTACT OUR FACTORY DIRECT.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
ITC1100
1000 WATT, 50V, Pulsed
Avionics 1030 MHz
GENERAL DESCRIPTION
The
ITC1100
is a common base bipolar transistor. It is designed for pulsed
interrogator systems in the frequency band of 1030 MHz. The device has gold
thin-film metallization for proven high MTTF. The transistor includes input
returns for improved output rise time . Low thermal resistance package reduces
junction temperature which extends the life time of the product.
CASE OUTLINE
55SW, Style 1
Common Base
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation
1
@25
°
C (P
d
)
Thermal Resistance
1
(
θ
JC
)
Voltage and Current
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
1
Temperatures
Storage Temperature
Operating Junction Temperature
1
3400 W
.08
°
C/W
65V
3.5V
80A
-40 to +150
°
C
+200
°
C
ELECTRICAL CHARACTERISTICS @ 25
°
C
SYMBOL
CHARACTERISTICS
TEST
CONDITIONS
MIN
TYP
MAX
UNITS
BVebo
2
BVces
BVceo
2
h
FE
Emitter-Base Breakdown(open)
Ie=50mA
3.5
65
30
20
V
V
V
β
Collector-Emitter Breakdown(shorted)
Ic=30mA
Collector-Emitter Breakdown (open)
Ic=30mA
2
DC Current Gain
Ic=5A, Vce=5V
100
FUNCTIONAL CHARACTERISTICS @ 25
°
C
G
PB
Common Base Power Gain
V
cc
= 50V, F = 1030MHz,
P
out
=1000W Peak Min, PW=1
μ
S, DF=1%
V
cc
= 50V, F = 1030MHz,
P
out
=1000W Peak Min, PW=1
μ
S, DF=1%
V
cc
= 50V, F = 1030MHz,
P
out
=1000W Peak Min, PW=1
μ
S, DF=1%
V
cc
= 50V, F = 1030MHz,
P
out
=1000W Peak Min, PW=1
μ
S, DF=1%
V
cc
= 50V, F = 1030MHz,
P
out
=1000W Peak Min, PW=1
μ
S, DF=1%
V
cc
= 50V, F = 1030MHz,
P
out
=1000W Peak Min, PW=1
μ
S, DF=1%
10
10.5
dB
η
c
Collector Efficiency
45
50
%
t
r
Rise Time
50
80
nS
VSWR
Output Load Mismatch
4:1
Ψ
Z
in
Series Input Impedance (Circuit
source impedance @ test cond.)
0.89 – j2.3
Z
out
Series Output Impedance (Circuit
load impedance @ test cond.)
0.54 - j2.64
1
At rated output power and pulse conditions
2
Not measurable due to EB Returns
相關(guān)PDF資料
PDF描述
ITC135PTR FET-OUTPUT OPTOCOUPLER
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ITC135P 功能描述:固態(tài)繼電器-PCB安裝 Integrated RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負(fù)載電壓額定值:40 V 負(fù)載電流額定值:120 mA 觸點(diǎn)形式:1 Form A (SPST-NO) 輸出設(shè)備:MOSFET 封裝 / 箱體:USOP-4 安裝風(fēng)格:SMD/SMT
ITC135P_12 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Integrated Telecom Circuits
ITC135PTR 功能描述:固態(tài)繼電器-PCB安裝 Integrated RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負(fù)載電壓額定值:40 V 負(fù)載電流額定值:120 mA 觸點(diǎn)形式:1 Form A (SPST-NO) 輸出設(shè)備:MOSFET 封裝 / 箱體:USOP-4 安裝風(fēng)格:SMD/SMT
ITC137P 功能描述:固態(tài)繼電器-PCB安裝 Integrated RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負(fù)載電壓額定值:40 V 負(fù)載電流額定值:120 mA 觸點(diǎn)形式:1 Form A (SPST-NO) 輸出設(shè)備:MOSFET 封裝 / 箱體:USOP-4 安裝風(fēng)格:SMD/SMT
ITC137P_12 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Integrated Telecom Circuits
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