參數(shù)資料
型號(hào): ISPGDXTMFAMILY
廠商: Lattice Semiconductor Corporation
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: JT 100C 100#22D PIN RECP
中文描述: 在系統(tǒng)可編程通用數(shù)字CrosspointTM
文件頁數(shù): 7/25頁
文件大小: 326K
代理商: ISPGDXTMFAMILY
7
Specifications
ispGDX Family
Switching Test Conditions
Output Load Conditions
TEST CONDITION
R1
160
160
R2
90
90
90
CL
35pF
35pF
35pF
A
B
Active High
Active Low
Active High to Z
at
V
OH
C
160
90
5pF
90
5pF
Active Low to Z
at
V
+0.5V
OL
Table 2 - 0004A
Output Low Voltage
Output High Voltage
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
ispEN Input Low Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
Quiescent Power Supply Current
Dynamic Power Supply Current
per Input Switching
V
V
μ
A
μ
A
μ
A
μ
A
mA
mA
mA/MHz
I
OL
=24 mA
I
OH
=-24 mA
0V
V
IN
V
IL
(MAX.)
3.5V
V
IN
V
CC
0V
V
IN
V
IL
(MAX.)
0V
V
IN
V
IL
V
CC
= 5V, V
OUT
= 0.5V, T
A
= 25
C
V
IL
= 0.5V, V
IH
= V
CC
One input toggling @ 50% duty cycle,
outputs open.
V
OL
V
OH
I
IL
I
IH
I
IL-isp
I
IL-PU
I
OS
1
I
CCQ
I
CC
25
See
Note 3
2.4
-100
1. One output at a time for a maximum duration of one second. V
= 0.5V was selected to avoid test problems by tester ground
degradation. Characterized but not 100% tested.
2. Typical values are at V
= 5V and T
= 25
o
C.
3. I
/ MHz = (0.0114 x I/O cell fanout) + 0.06
e.g. An input driving four I/O cells at 40 MHz results in a dynamic I of approximately ((0.0114 x 4) + 0.06) x 40 = 4.2 mA.
SYMBOL
MIN.
MAX.
0.55
-10
10
-150
-150
-250
40
TYP.
2
PARAMETER
CONDITION
UNITS
Input Pulse Levels
GND to 3.0V
Input Rise and Fall Time
1.5ns 10% to 90%
Input Timing Reference Levels
1.5V
Output Timing Reference Levels
1.5V
Output Load
See figure at right
3-state levels are measured 0.5V from steady-state
active level.
CC
A
OUT
DC Electrical Characteristics
Over Recommended Operating Conditions
+ 5V
R1
R2
CL
*
Device
Output
Test
Point
*
CL includes Test Fixture and Probe Capacitance.
CC
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