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參數(shù)資料
| 型號： | ISL9R860S3ST |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Choke; Inductance:1.5mH; Current Rating:4A; Leaded Process Compatible:Yes; Resistance:0.02ohm |
| 中文描述： | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 129K |
| 代理商： | ISL9R860S3ST |
2004 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C1
I
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off State Characteristics
I
R
Instantaneous Reverse Current
On State Characteristics
V
F
Instantaneous Forward Voltage
Dynamic Characteristics
C
J
Junction Capacitance
Switching Characteristics
t
rr
Reverse Recovery Time
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction to Case
R
θ
JA
Thermal Resistance Junction to Ambient TO-220
R
θ
JA
Thermal Resistance Junction to Ambient TO-262
R
θ
JA
Thermal Resistance Junction to Ambient TO-263
Device Marking
R860P2
R860S2
R860S3S
Device
ISL9R860P2
ISL9R860S2
ISL9R860S3ST
Package
TO-220AC
TO-262
TO-263AB
Tape Width
-
-
24mm
Quantity
-
-
800
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V
R
= 600V
T
C
= 25°C
T
C
= 125°C
-
-
-
-
100
1.0
μ
A
mA
I
F
= 8A
T
C
= 25°C
T
C
= 125°C
-
-
2.0
1.6
2.4
2.0
V
V
V
R
= 10V, I
F
= 0A
-
30
-
pF
I
F
= 1A, dI
F
/dt = 100A/
μ
s, V
R
= 30V
I
F
= 8A, dI
F
/dt = 100A/
μ
s, V
R
= 30V
I
F
= 8A,
dI
F
/dt = 200A/
μ
s,
V
R
= 390V, T
C
= 25°C
-
-
-
-
-
-
-
-
-
-
-
-
18
21
28
3.2
50
77
3.7
3.4
150
53
2.5
6.5
195
500
25
30
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
A
nC
ns
t
rr
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovery Charge
Maximum di/dt during t
b
I
RRM
Q
RR
t
rr
S
I
RRM
Q
RR
t
rr
S
I
RRM
Q
RR
dI
M
/dt
I
F
= 8A,
dI
F
/dt = 200A/
μ
s,
V
R
= 390V,
T
C
= 125°C
A
nC
ns
I
F
= 8A,
dI
F
/dt = 600A/
μ
s,
V
R
= 390V,
T
C
= 125°C
A
nC
A/μs
-
-
-
-
-
-
-
1.75
62
62
62
°C/W
°C/W
°C/W
°C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ISL9R860PF2 | 8A, 600V Stealth Diode |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISL9R860S3ST_NL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| ISL9V2020D3ST | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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