參數(shù)資料
型號(hào): ISL9R860S3ST
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 參考電壓二極管
英文描述: Choke; Inductance:1.5mH; Current Rating:4A; Leaded Process Compatible:Yes; Resistance:0.02ohm
中文描述: 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB
封裝: TO-263AB, 3 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 129K
代理商: ISL9R860S3ST
2004 Fairchild Semiconductor Corporation
May 2004
I
ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C1
ISL9R860P2, ISL9R860S2, ISL9R860S3ST
8A, 600V Stealth Diode
General Description
The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are
Stealth diodes optimized for low loss performance in
high frequency hard switched applications. The
Stealth family exhibits low reverse recovery current
(I
) and exceptionally soft recovery under typical
operating conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low I
and short t
phase
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Formerly developmental type TA49409.
Features
Soft Recovery . . . . . . . . . . . . . . . . . . .t
b
/ t
a
> 2.5
Fast Recovery . . . . . . . . . . . . . . . . . . . . t
rr
< 25ns
Operating Temperature . . . . . . . . . . . . . . . 175
o
C
Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V
Avalanche Energy Rated
Applications
Switch Mode Power Supplies
Hard Switched PFC Boost Diode
UPS Free Wheeling Diode
Motor Drive FWD
SMPS FWD
Snubber Diode
Device Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
T
J
, T
STG
T
L
T
PKG
Parameter
Ratings
600
600
600
8
16
100
85
20
-55 to 175
Units
V
V
V
A
A
A
W
mJ
°C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
C
= 147
o
C)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
°C
°C
K
A
CATHODE
(FLANGE)
CATHODE
ANODE
JEDEC STYLE TO-262
JEDEC TO-220AC
CATHODE
(FLANGE)
ANODE
N/C
CATHODE
(FLANGE)
CATHODE
ANODE
JEDEC TO-263AB
Package
Symbol
相關(guān)PDF資料
PDF描述
ISL9R860PF2 8A, 600V Stealth Diode
ISL9R860P2 8A, 600V Stealth⑩ Diode
ISL9R860S2 8A, 600V Stealth⑩ Diode
ISL9R860S3S 8A, 600V Stealth⑩ Diode
ISL9V5036S3ST Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.3 to 5.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: MHD
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