參數(shù)資料
型號(hào)： ISL9N327AD3ST
廠(chǎng)商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
中文描述： 20 A, 30 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁(yè)數(shù)： 1/11頁(yè)
文件大小： 185K
代理商： ISL9N327AD3ST
2002 Fairchild Semiconductor Corporation
February 2002
Rev. B, February 2002
I
ISL9N327AD3ST
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
DC/DC converters
Features
Fast switching
r
DS(ON)
= 0.023
(Typ), V
GS
= 10V
r
DS(ON)
= 0.033
(Typ), V
GS
= 4.5V
Q
g
(Typ) = 8.7nC, V
GS
= 5V
Q
gd
(Typ) =3.2nC
C
ISS
(Typ) =910pF
MOSFET Maximum Ratings
T
A
=25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
θ
JA
= 52
o
C/W)
Pulsed
Power dissipation
Derate above
Operating and Storage Temperature
I
D
20
17
7
A
A
A
Figure 4
50
0.33
-55 to 175
P
D
W
W/
o
C
o
C
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case , TO-252
Thermal Resistance Junction to Ambient , TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
3
o
C/W
o
C/W
o
C/W
100
52
Device Marking
N327AD
Device
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
ISL9N327AD3ST
GATE
SOURCE
DRAIN (FLANGE)
D
G
S
TO-252
相關(guān)PDF資料
PDF描述
ISL9R2480G2 24A, 800V Stealth⑩ Diode
ISL9R860S3ST Choke; Inductance:1.5mH; Current Rating:4A; Leaded Process Compatible:Yes; Resistance:0.02ohm
ISL9R860PF2 8A, 600V Stealth Diode
ISL9R860P2 8A, 600V Stealth⑩ Diode
ISL9R860S2 8A, 600V Stealth⑩ Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ISL9N7030BLP3 功能描述:MOSFET 30V 0.009 Ohm N-Ch Logic Level 74a RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N7030BLS3ST 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9R1560G2 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
ISL9R1560G2_Q 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
ISL9R1560P2 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠(chǎng)商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*