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參數(shù)資料
| 型號： | ISL9N316AS3ST |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 48A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 48A條（?。﹟對263AB |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 305K |
| 代理商： | ISL9N316AS3ST |
2002 Fairchild Semiconductor Corporation
October 2002
ISL9N305ASK8T Rev A1
I
ISL9N305ASK8T
N-Channel Logic Level PWM Optimized UltraFET
Trench Power MOSFET
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
DC/DC converters
Features
Fast switching
r
DS(ON)
= 0.004
(Typ), V
GS
= 10V
r
DS(ON)
= 0.0064
(Typ), V
GS
= 4.5V
Q
g
(Typ) = 38nC, V
GS
= 5V
Q
gd
(Typ) = 11.5nC
C
ISS
(Typ) = 4260pF
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V)
Continuous (T
A
= 100
o
C, V
GS
= 4.5V)
Pulsed
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
`I
D
18
9
A
A
A
W
Figure 4
2.5
20
-55 to 150
P
D
mW/
o
C
o
C
T
J
, T
STG
R
θ
JA
R
θ
JA
R
θ
JA
FR-4 board with 0.76 in
2
( 490 mm
2
) copper pad at 10 seconds
FR-4 board with 0.054 in
2
( 34.8 mm
2
) copper pad at 1000 seconds
FR-4 board with 0.0115 in
2
( 7.42 mm
2
) copper pad at 1000 seconds
50
152
189
o
C/W
o
C/W
o
C/W
Device Marking
N305ASK8
Device
Reel Size
330mm
Tape Width
12mm
Quantity
2500units
ISL9N305ASK8T
DRAIN (8)
SOURCE (1)
DRAIN (7)
DRAIN (6)
DRAIN (5)
SOURCE (3)
GATE (4)
SOURCE (2)
SO-8
Branding Dash
1
5
2
3
4
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| ISO-CMOS | ASIC |
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參數(shù)描述 |
|---|---|
| ISL9N318AD3ST | 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N322AD3ST | 功能描述:MOSFET 30V 20a 0.022 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N322AP3 | 功能描述:MOSFET N-Ch PWM Optimized Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N322AS3ST | 功能描述:MOSFET N-Ch MOSFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N327AD3ST | 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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