參數(shù)資料
型號(hào)： ISL9N304AP3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5mз
中文描述： 75 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 5/11頁
文件大?。?/td> 195K
代理商： ISL9N304AP3
2002 Fairchild Semiconductor Corporation
Rev. B, February 2002
I
Final Draft
Figure 11. Capacitance vs Drain to Source
Voltage
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
Figure 13. Switching Time vs Gate Resistance
Figure 14. Switching Time vs Gate Resistance
Typical Characteristic
(Continued)
1000
0.1
1
10
30
300
6000
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
V
GS
=
0V, f
=
1MHz
0
2
4
6
8
10
0
15
30
45
60
75
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 15V
I
D
= 75A
I
D
= 20A
WAVEFORMS IN
DESCENDING ORDER:
0
50
100
150
200
250
0
10
R
GS
, GATE TO SOURCE RESISTANCE (
)
20
30
40
50
S
V
GS
= 4.5V, V
DD
= 15V, I
D
= 20A
t
d(OFF)
t
r
t
d(ON)
t
f
0
100
200
300
400
500
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 15V, I
D
= 20A
t
d(OFF)
t
r
t
d(ON)
t
f
0
10
20
30
40
50
Test Circuits and Waveforms
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
相關(guān)PDF資料
PDF描述
ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mз
ISL9N306AD3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mз
ISL9N306AP3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
ISL9N306AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
ISL9N307AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ISL9N304AP3_NF060 功能描述:MOSFET Single, N-Ch 30V, 0.0045Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N304AS3ST 功能描述:MOSFET 30V 75a 4.5 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N306AD3 功能描述:MOSFET 30V N-Channel Logic Level PWM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N306AD3ST 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N306AP3 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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