參數(shù)資料
型號： ISL9N304AP3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5mз
中文描述： 75 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/11頁
文件大?。?/td> 195K
代理商： ISL9N304AP3
2002 Fairchild Semiconductor Corporation
Rev. B, February 2002
I
Final Draft
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(5)
Total Gate Charge at 5V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= 4.5V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Unclamped Inductive Switching
t
AV
Avalanche Time
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 25V
V
GS
= 0V
V
GS
=
±
20V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 75A, V
GS
= 10V
I
D
= 74A, V
GS
= 4.5V
1
-
-
-
3
V
r
DS(ON)
Drain to Source On Resistance
0.0036
0.0060
0.0045
0.0075
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
4075
830
380
70
38
3.9
11
13
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V
I
D
= 74A
I
g
= 1.0mA
105
57
5.8
-
-
-
-
-
-
V
DD
= 15V, I
D
= 20A
V
GS
= 4.5V, R
GS
= 2.4
-
-
-
-
-
-
-
137
-
-
-
-
79
ns
ns
ns
ns
ns
ns
14
77
33
20
-
V
DD
= 15V, I
D
= 20A
V
GS
= 10V, R
GS
= 2.4
-
-
-
-
-
-
-
9
67
51
19
-
113
-
-
-
-
104
ns
ns
ns
ns
ns
ns
I
D
= 3.8A, L = 3.0mH
255
-
-
μ
s
V
SD
Source to Drain Diode Voltage
I
SD
= 74A
I
SD
= 35A
I
SD
= 74A, dI
SD
/dt = 100A/
μ
s
I
SD
= 74A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
27
16
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
相關(guān)PDF資料
PDF描述
ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mз
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ISL9N304AP3_NF060 功能描述:MOSFET Single, N-Ch 30V, 0.0045Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N304AS3ST 功能描述:MOSFET 30V 75a 4.5 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N306AD3 功能描述:MOSFET 30V N-Channel Logic Level PWM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N306AD3ST 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N306AP3 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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