參數(shù)資料
型號(hào): ISL6160CB-T
廠商: Intersil
文件頁數(shù): 5/11頁
文件大?。?/td> 262K
描述: IC CTRLR BULK/AUXILIARY 14-SOIC
標(biāo)準(zhǔn)包裝: 2,500
類型: 電源管理
應(yīng)用: -48V 分布式電源系統(tǒng),AdvancedTCA ? 系統(tǒng),Infiniband
內(nèi)部開關(guān):
電流限制: 1A
電源電壓: 4.5 V ~ 5.5 V,10 V ~ 14 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 14-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 14-SOICN
包裝: 帶卷 (TR)
5
ISL6160 Description and Operation
The ISL6160 is the first power supply sequencer for the
emerging InfiniBand module (IM) hot swap application. This IC
controls both the +12V VB(ulk) and +5V VA(ux) supplies
providing soft start during hot insertion and overcurrent (OC)
protection during operation.
For VB control and protection, the ISL6160 features include an
accurate current detecting comparator, current limiting for the
range of both 25W and 50W capable power ports, a current
regulated time delay to latch off and soft start turn-on ramp.
These features are all programmable with a minimum of
external passive components. The ISL6160 also includes
severe overcurrent protection that immediately shuts down the
MOSFET switch should there be a shorted IM load.
The VB_ON pin provides on-off control of the external VB
switch once VB_IN > 9V. Driving this pin high causes the gate
pin to charge the external gate capacitor with a 10uA current
setting the soft start ramp rate. Large capacitive loads can thus
be safely turned on with no inrush current spiking nor disruption
of the voltage supply rail.
The VB load current passes through an external current sense
resistor. When the voltage across the sense resistor exceeds
the user programmed ISET voltage threshold, the controller
enters current regulation (CR). The regulated current level is
fixed by the R
ISET
 and R
SENSE
resistors. See Table 1 for
R
ISET
programming resistor value and the resulting nominal
CR threshold voltage.
During CR, the CTIM pin starts charging the time-out capacitor
with a 20礎(chǔ) current source and the controller enters the delay
time to latch-off period. This feature allows transient currents
that exceed the designed limit to pass without immediately
CTIM PARAMETERS
C
TIM
 Charging Current
C
TIM
_ichg0   V
CTIM
 = 0V
16
20
23
礎(chǔ)
C
TIM
 Fault Pull-Up Current
C
TIM
_ichg6   V
CTIM
 = 6V
5
8
11
mA
Current Limit Time-Out Threshold Voltage
C
TIM
_Vth    CTIM Voltage
1.3
1.8
2.3
V
+5V AUXILIARY SUPPLY CONTROL
VA Integrated Switch On Resistance
r
DS(ON)
V
IN
 = 5V, I
OUT
 = 0.4A, T
A
 = T
J
 = 25
o
C
-
0.125   0.150
&
T
A
 = T
J
 = 85
o
C
-
0.160   0.200
&
Disabled Output Voltage
V
OUT_DIS
V
IN
 = 5V, Switch Disabled, No Load
-
300
450
mV
V
OUT
 Rising Rate
t_vout_rt
R
L
 = 10&, C
L
 = 0.1礔, 10%-90%
-
8
-
V/mS
Slow V
OUT
 turn-off rate
Toff_svout    R
L
 = 10&, C
L
 = 0.1礔, 90%-10%
-
8
-
V/mS
Fast V
OUT
 turn-off rate
Toff_fvout
R
L
 = 10&, C
L
 = 0.1礔, 90%-10%
-
4
-
V/uS
CURRENT CONTROL
Current Limit
Ilim
0.75
1
1.25
A
OC Regulation Settling Time
Tsett_ocr
R
L
= 5&, C
L
= 0.1礔 to Within 10% of CR
-
1.5
-
ms
Severe OC Regulation Settling Time
Tsett_socr    R
L
< 1&, C
L
= 0.1礔 to Within 10% of CR
-
100
-
Over Current Latch-off Time
t
OC_loff
-
12
ms
I/O PARAMETERS
Fault Output Voltage
Vfault_hi
I
OUT
 = 10mA
-
-
0.3
V
ENABLE High Threshold
Ven_vih
V
IN
 = 5.5V
2.0
-
-
V
ENABLE Low Threshold
Ven_vil
V
IN
 = 4.5V
-
-
0.8
V
ENABLE Input Current
Ien_i
ENABLE = 0V to 5V, V
IN
 = 5V, T
J
 > 25
o
C
-0.5
-
0.5
礎(chǔ)
BIAS PARAMETERS
Enabled VA_Iin Current
I
en_VA
Switches Closed, VA_Out = OPEN, T
J
 >0
o
C
-
120
200
礎(chǔ)
Disabled VA_Iin Current
I
dis_VA
Switches Open, VA_Out = OPEN
-
1
5
礎(chǔ)
Undervoltage Lockout Threshold
V
UVLO
VIN Rising, Switch Enabled
1.7
2.25
2.5
V
UV Hysteresis
UV
HYS
50
100
-
mV
Electrical Specifications    Nominal VB = +12V, VA = +5V, T
A
 = T
J 
= -40
o
C - 85
o
C, Unless Otherwise Specified  (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP    MAX
UNIT
S
TABLE 1.
NOMINAL REGULATION LEVEL
(R
SENSE
 = 0.020&)
R
ISET
RESISTOR
NOMINAL
OC Vth
CURRENT (A)
POWER (W)
1.0k&
20mV
1
12
2.8k&
56mV
2.8
33.6
3.48k&
70mV
3.5
42
5.6k&
112mV
5.6
67.2
NOTE: Nominal Vth = R
ISET
 x 20礎(chǔ).
ISL6160
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