Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. G
04/26/01
1
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. Copyright 2001, Integrated Silicon Solution, Inc.
IS93C66-3
4,096-BIT SERIAL ELECTRICALLY
ERASABLE PROM
ISSI
OVERVIEW
The IS93C66-3 is a low cost 4,096-bit, non-volatile, serial
E
2
PROM. It is fabricated using ISSI's advanced CMOS
E
2
PROM technology. The IS93C66-3 provides efficient
non-volatile read/write memory arranged as 256 registers
of 16 bits each. Seven 11-bit instructions control the
operation of the device, which includes read, write, and
mode enable functions. The data out pin (D
OUT
) indicates
the status of the device during in the self-timed non-volatile
programming cycle.
The self-timed write cycle includes an automatic erase-
before-write capability. To protect against inadvertent
writes, the WRITE instruction is accepted only while the
chip is in the write enabled state. Data is written in 16 bits
per write instruction into the selected register. If Chip
Select
(CS)
is brought
HIGH
after initiation of the write cycle,
the Data Output (D
OUT
) pin will indicate the
READY/
BUSY
status of the chip.
APPLICATIONS
The IS93C66-3 is ideal for high-volume applications
requiring low power and low density storage. This device
uses a low cost, space saving 8-pin package. Candidate
applications include robotics, alarm devices, electronic
locks, meters and instrumentation settings.
MARCH 2001
FUNCTIONAL BLOCK DIAGRAM
FEATURES
State-of-the-art architecture
— Non-volatile data storage
— Low voltage operation:
3.0V (Vcc = 2.7V to 6.0V)
— Full TTL compatible inputs and outputs
— Auto increment for efficient data dump
Low voltage read operation
— Down to 2.7V
Hardware and software write protection
— Defaults to write-disabled state at power-up
— Software instructions for write-enable/disable
Advanced low voltage CMOS E
2
PROM
technology
Versatile, easy-to-use interface
— Self-timed programming cycle
— Automatic erase-before-write
— Programming status indicator
— Word and chip erasable
— Stop SK anytime for power savings
Durable and reliable
— 10-year data retention after 100K write cycles
— 100,000 write cycles
— Unlimited read cycles
CS
SK
D
IN
D
OUT
DUMMY
BIT
R/W
AMPS
DATA
REGISTER
(16 BITS)
ADDRESS
REGISTER
1 OF 256
DECODER
WRITE
ENABLE
HIGH VOLTAGE
GENERATOR
INSTRUCTION
DECODE,
CONTROL,
AND
CLOCK
GENERATION
INSTRUCTION
REGISTER
(11 BITS)
EEPROM
ARRAY
(256 X 16)