參數(shù)資料
型號(hào): IS93C66-3G
廠商: INTEGRATED SILICON SOLUTION INC
元件分類(lèi): DRAM
英文描述: 4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM
中文描述: 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封裝: SO-8
文件頁(yè)數(shù): 4/10頁(yè)
文件大?。?/td> 83K
代理商: IS93C66-3G
4
Integrated Silicon Solution, Inc.
1-800-379-4774
Rev. G
04/26/01
IS93C66-3
ISSI
CAPACITANCE
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
5
pF
C
OUT
Output Capacitance
V
OUT
= 0V
5
pF
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
GND
T
BIAS
T
BIAS
T
STG
Parameter
Voltage with Respect to GND
Temperature Under Bias (IS93C46-3)
Temperature Under Bias (IS93C46-3I)
Storage Temperature
Value
0.3 tp +6.5
0 to +70
40 to +85
65 to +125
Unit
V
°
C
°
C
°
C
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0
°
C to +70
°
C
40
°
C to +85
°
C
V
CC
2.7V to 6.0V
2.7V to 6.0V
FIGURE 1. AC TEST CONDITIONS
800
100 pF
+2.08V
D
OUT
Vcc = 5.0V
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IS93C66-3GI 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM
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IS93C66-3GRI 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C66-3P 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C66-3PI 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM