參數(shù)資料
型號: IS75V16F128GS32
廠商: Integrated Silicon Solution, Inc.
英文描述: 3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM
中文描述: 3.0伏多芯片封裝(MCP)128兆位同步運行閃存和32兆位偽靜態(tài)RAM
文件頁數(shù): 7/52頁
文件大?。?/td> 264K
代理商: IS75V16F128GS32
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00D
03/24/03
7
IS75V16F128GS32
ISSI
DC CHARACTERISTICS
(Continued)
Symbol Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
PD
8
r
PSRAM V
CC
Power
Down Current
(8M Partial)
(8)
Input Low Level
Input High Level (FLASH 1 or FLASH 2 )
Input High Level (PSRAM)
Voltage for Sector Protection
and Temp. Unprotection(
RESET
)
(4)
Voltage for
WP
/ACC
Sector Protection/Unprotection
and Program Acceleration
(4)
Output Low Level
(PSRAM)
Output High Level
(PSRAM)
Output Low Level
(Flash)
Output High Level
(Flash)
FLASH Low Vccf
Lock-Out Voltage
V
CC
r = V
CC
r max.,
CE1
r
V
CC
r - 0.2 V
CE2r
0.2 V, V
IN
Cycle time = t
RC
min
80
μ
A
V
IL
V
IH
V
IH
V
ID
-0.3
0.5
V
V
V
V
V
CC
f
X
0.75 —
V
CC
r
X
0.75 —
11.5
V
CC
f + 0.3
V
CC
r + 0.3
12.5
V
ACC
8.5
9.0
9.5
V
V
OL
V
CC
r = V
CC
r min., V
CCS
=V
CCS
min.
I
OL
= 1.0 mA
V
CC
r = V
CC
r min., V
CCS
=V
CCS
min.
I
OH
= -0.5 mA
V
CC
f = V
CC
f min., V
CCS
=V
CCS
min.
I
OL
= 4.0 mA
V
CC
f = V
CC
f min., V
CCS
=V
CCS
min.
I
OH
= -0.1 mA
0.4
V
V
OH
2.2
V
V
OL
0.45
V
V
OH
V
CC
f - 0.4
V
V
LKO
2.3
2.4
2.5
V
Notes:
1. ICC current listed includes both the DC operating current and the frequency dependent component.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. Automatic sleep mode enables the low power mode when address remains stable for 150 ns.
4. Applicable for only VCCf applying.
5. Embedded Algorithm (program or erase) is in progress. (@5 MHz)
6. ISB2 r depends on VIN cycle time. Please refer to “APPENDIX A”.
7. Standby current listed is for each FLASH chip.
8. Standby and Power down currents are reduced with Vccr
<
3.0 V .
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