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參數(shù)資料
| 型號： | IS75V16F128GS32 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM |
| 中文描述： | 3.0伏多芯片封裝（MCP）128兆位同步運行閃存和32兆位偽靜態(tài)RAM |
| 文件頁數(shù)： | 37/52頁 |
| 文件大?。?/td> | 264K |
| 代理商： | IS75V16F128GS32 |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00D
03/24/03
37
IS75V16F128GS32
ISSI
MODE
Data Retention
Area
A16
A17
A18
A19
A20
Mode Select
Area Select
X
L
H
X
L
H
H
H
L
L
L
H
X
L
H
X
X
L
H
X
None
Bottom 8M Only
Top 8M only
None
NAP
8M Partial
SLEEP
A16
L
L
H
H
A17
L
H
H
H
MODE
NAP
RESERVED
8M Partial
SLEEP
AREA
BOTTOM
RESERVED
RESERVED
TOP
A18
L
L
H
H
A19
L
H
L
H
A20
L
X
X
H
Definition
A16
A17
A20
A18
A19
KEY
Mode Select
Area Select
Basic KEY Table
Available KEY Table
(3)
(2)
(4)
(4,5)
PSRAM POWER DOWN PROGRAM KEY TABLE
Notes:
1: The Power Down Program can be performed one time after compliance of Power-up timings and it should not be
re-programmed after regular Read or Write. Unspecified addresses, A0 to A15, can be either High or Low during
the programming. The RESERVED key should not be used.
2: TOP area is from the lowest address location. (i.e., A[20:0] = H))
3: BOTTOM area is from the highest address location. (i.e., A[20:0] = L)
4: NAP and SLEEP do not retain the data and Area Select is ignored.
5: Default state. Power Down Program to this SLEEP mode can be omitted.
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| IS75V16F128GS32-7065BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM |
| IS75V16F64GS16-7080DI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP) |
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