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參數(shù)資料
| 型號： | IS62WV20488BLL-25MLI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| 中文描述： | 2M X 8 STANDARD SRAM, 25 ns, PBGA48 |
| 封裝： | 9 X 11 MM, LEAD FREE, MINI, BGA-48 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 120K |
| 代理商： | IS62WV20488BLL-25MLI |
10
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
06/21/06
ISSI
IS62WV20488ALL
IS62WV20488BLL
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,2)
(Over Operating Range)
25 ns
35 ns
Symbol
t
WC
t
SCS1/
t
SCS2
CS1/
CS2 to Write End
t
AW
Address Setup Time to Write End
t
HA
Address Hold from Write End
t
SA
Address Setup Time
t
PWE
(4)
WE
Pulse Width
t
SD
Data Setup to Write End
t
HD
Data Hold from Write End
t
HZWE
(3)
WE
LOW to High-Z Output
t
LZWE
(3)
WE
HIGH to Low-Z Output
Parameter
Write Cycle Time
Min.
25
18
15
0
0
18
12
Max.
—
—
—
—
—
—
—
Min.
35
25
25
0
0
30
15
Max.
—
—
—
—
—
—
—
Unit
ns
ns
ns
ns
ns
ns
ns
0
—
12
—
0
—
5
—
20
—
ns
ns
ns
—
5
Notes:
1. Test conditions assume signal transition times of 5 ns or ess, timing reference evels of 0.9V/1.5V, nput pulse evels of 0.4 to V
DD
-0.2V/0.4V to V
DD
-0.3V and
output oading specified n Figure 1.
2.
The internal write time is defined by the overlap of
CS1
LOW, CS2 HIGH and
UB
or
LB
, and
WE
LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to
terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the
write.
3. Tested with the oad n Figure 2. Transition s measured ±500 mV from steady-state voltage. Not 100% tested.
4. t
PWE
> t
HZWE
+ t
SD
when
OE
is LOW.
AC WAVEFORMS
WRITE CYCLE NO. 1 (
CS1
/CS2 Controlled,
OE
= HIGH or LOW
)
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCS1
t
SCS2
t
AW
t
HA
t
PWE
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
CS1
CS2
WE
DOUT
DIN
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| IS62WV20488BLL-25TI | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL-25TLI | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV25616ALL | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62WV20488BLL-25MLI-TR | 功能描述:靜態(tài)隨機存取存儲器 16M (2Mx8) 25ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV20488BLL-25TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL-25TLI | 功能描述:靜態(tài)隨機存取存儲器 16M (2Mx8) 25ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV20488BLL-25TLI-TR | 功能描述:靜態(tài)隨機存取存儲器 16M (2Mx8) 25ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV25616ALL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
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