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參數(shù)資料
| 型號(hào)： | IS62WV20488ALL-35MI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| 中文描述： | 2M X 8 STANDARD SRAM, 35 ns, PBGA48 |
| 封裝： | 9 X 11 MM, MINI, BGA-48 |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 120K |
| 代理商： | IS62WV20488ALL-35MI |
8
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
06/21/06
ISSI
IS62WV20488ALL
IS62WV20488BLL
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
25ns
35ns
Symbol
t
RC
t
AA
t
OHA
t
ACS1/
t
ACS2
t
DOE
t
HZOE
(2)
t
LZOE
(2)
t
HZCS1/
t
HZCS2
(2)
t
LZCS1/
t
LZCS2
(2)
Parameter
Min.
Max.
Min.
Max.
Unit
Read Cycle Time
25
—
35
—
ns
Address Access Time
—
25
—
35
ns
Output Hold Time
4
—
4
—
ns
CS1
/CS2 Access Time
—
25
—
35
ns
OE
Access Time
—
12
—
15
ns
OE
to High-Z Output
—
8
—
10
ns
OE
to Low-Z Output
5
—
5
—
ns
CS1
/CS2 to High-Z Output
0
8
0
10
ns
CS1
/CS2 to Low-Z Output
10
—
10
—
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or ess, timing reference evels of 0.9V/1.5V, nput pulse evels of 0.4 to V
DD
-0.2V/0.4V to V
DD
-0.3V and
output oading specified n Figure 1.
2. Tested with the oad n Figure 2. Transition s measured ±500 mV from steady-state voltage. Not 100% tested.
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
(Address Controlled) (
CS1
=
OE
= V
IL
,
CS2 =
WE
= V
IH
)
DATA VALID
PREVIOUS DATA VALID
t
AA
t
OHA
t
OHA
t
RC
D
OUT
ADDRESS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS62WV20488ALL-35TI | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL-25MI | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL-25MLI | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL-25TI | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62WV20488ALL-35TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL-25MI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL-25MLI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16M (2Mx8) 25ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV20488BLL-25MLI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16M (2Mx8) 25ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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