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參數(shù)資料
| 型號(hào)： | IS62WV20488ALL-35MI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| 中文描述： | 2M X 8 STANDARD SRAM, 35 ns, PBGA48 |
| 封裝： | 9 X 11 MM, MINI, BGA-48 |
| 文件頁數(shù)： | 5/16頁 |
| 文件大小： | 120K |
| 代理商： | IS62WV20488ALL-35MI |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
06/21/06
5
ISSI
IS62WV20488ALL
IS62WV20488BLL
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 2.4V-3.6V
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= –1.0 mA
1.8
—
V
V
OL
Output LOW Voltage
V
DD
= Min., I
OL
= 1.0 mA
—
0.4
V
V
IH
Input HIGH Voltage
Input LOW Voltage
(1)
2.0
V
DD
+ 0.3
V
V
IL
–0.3
0.8
V
I
LI
Input Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
–1
1
μA
I
LO
Output Leakage
–1
1
μA
Note:
1. V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 1.65V-2.2V
Symbol
Parameter
Test Conditions
V
DD
Min.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= -0.1 mA
1.65-2.2V
1.4
—
V
V
OL
Output LOW Voltage
I
OL
= 0.1 mA
1.65-2.2V
—
0.2
V
V
IH
V
IL(1)
Input HIGH Voltage
1.65-2.2V
1.4
V
DD
+ 0.2
V
Input LOW Voltage
1.65-2.2V
–0.2
0.4
V
I
LI
Input Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
–1
1
μA
I
LO
Output Leakage
–1
1
μA
Note:
1. V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS62WV20488ALL-35TI | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL-25MI | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL-25MLI | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL-25TI | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62WV20488ALL-35TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL-25MI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL-25MLI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16M (2Mx8) 25ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV20488BLL-25MLI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16M (2Mx8) 25ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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