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參數(shù)資料
| 型號(hào)： | IS61LV51216 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 為512k × 16的CMOS高速異步靜態(tài)RAM為3.3V電源 |
| 文件頁(yè)數(shù)： | 8/15頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | IS61LV51216 |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
12/06/05
ISSI
IS61LV51216
IS64LV51216
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-8
-10
-12
Symbol
t
WC
t
SCE
t
AW
Parameter
Min. Max.
Min. Max.
Min. Max.
Unit
Write Cycle Time
8
—
10
—
12
—
ns
CE
to Write End
6.5
—
8
—
8
—
ns
Address Setup Time
to Write End
6.5
—
8
—
8
—
ns
t
HA
t
SA
t
PWB
t
PWE
1
t
PWE
2
t
SD
t
HD
t
HZWE
(2)
t
LZWE
(2)
Address Hold from Write End
0
—
0
—
0
—
ns
Address Setup Time
0
—
0
—
0
—
ns
LB
,
UB
Valid to End of Write
6.5
—
8
—
8
—
ns
WE
Pulse Width
6.5
—
8
—
8
—
ns
WE
Pulse Width (
OE
= LOW)
8.0
—
10
—
12
—
ns
Data Setup to Write End
5
—
6
—
6
—
ns
Data Hold from Write End
0
—
0
—
0
—
ns
WE
LOW to High-Z Output
—
3.5
—
5
—
6
ns
WE
HIGH to Low-Z Output
2
—
2
—
2
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to
3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE
LOW and
UB
or
LB
, and
WE
LOW. All signals must be in valid states
to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced
to the rising or falling edge of the signal that terminates the write. Shaded area product in development
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV51216-10M | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV51216-10MI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV51216-10MI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV51216-10MLI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV51216-10MLI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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