參數(shù)資料
型號: IS61LV51216
廠商: Integrated Silicon Solution, Inc.
英文描述: 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
中文描述: 為512k × 16的CMOS高速異步靜態(tài)RAM為3.3V電源
文件頁數(shù): 3/15頁
文件大?。?/td> 124K
代理商: IS61LV51216
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
12/06/05
3
1
2
3
4
5
6
7
8
9
10
11
12
ISSI
IS61LV51216
IS64LV51216
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
–0.5 to V
DD
+0.5
V
V
DD
V
DD
Related to GND
–0.3 to +4.0
V
T
STG
Storage Temperature
–65 to +150
°C
P
T
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
48-Pin mini BGA (9mmx11mm)
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB
OE
A0
A1
A2
N/C
I/O
8
UB
A3
A4
CE
I/O
0
I/O
9
I/O
10
A5
A6
I/O
1
I/O
2
GND
I/O
11
A17
A7
I/O
3
VDD
VDD
I/O
12
GND
A16
I/O
4
GND
I/O
14
I/O
13
A14
A15
I/O
5
I/O
6
I/O
15
NC
A12
A13
WE
I/O
7
A18
A8
A
9
A10
A11
NC
PIN CONFIGURATIONS
PIN DESCRIPTIONS
A0-A18
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
LB
Lower-byte Control (I/O0-I/O7)
UB
Upper-byte Control (I/O8-I/O15)
NC
No Connection
V
DD
Power
GND
Ground
相關(guān)PDF資料
PDF描述
IS61LV51216-10MLI 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
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IS61LV51216-10MI-TR 功能描述:靜態(tài)隨機存取存儲器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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