參數(shù)資料
型號: IS61C3216
廠商: Integrated Silicon Solution, Inc.
英文描述: 32K x 16 High-Speed CMOS Static RAM(32K x 16 高速CMOS靜態(tài)RAM)
中文描述: 32K的× 16高速CMOS靜態(tài)RAM(32K的× 16高速的CMOS靜態(tài)RAM)的
文件頁數(shù): 7/8頁
文件大小: 68K
代理商: IS61C3216
ISSI
IS61C3216
Integrated Silicon Solution, Inc.
SR007-1B
01/26/98
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Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CE
and
WE
inputs and at least
one of the
LB
and
UB
inputs being in the LOW state.
2. WRITE = (
CE
)
[
(
LB
) = (
UB
)
]
(
WE
).
AC WAVEFORMS
WRITE CYCLE NO. 1 (
WE
Controlled)
(1,2)
UNDEFINED
UNDEFINED
t
WC
t
SCE
t
PWB
t
AW
t
HA
HIGH-Z
HIGH-Z
t
PWE
t
HD
t
SA
t
HZWE
ADDRESS
CE
LB, UB
WE
WRITE
(1)
D
OUT
D
IN
t
LZWE
t
SD
相關(guān)PDF資料
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IS61C6416-20K 64K x 16 HIGH-SPEED CMOS STATIC RAM
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IS61C3216-12KI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C3216-12T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM