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參數(shù)資料
| 型號(hào)： | IS61C3216 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 32K x 16 High-Speed CMOS Static RAM(32K x 16 高速CMOS靜態(tài)RAM) |
| 中文描述： | 32K的× 16高速CMOS靜態(tài)RAM（32K的× 16高速的CMOS靜態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 68K |
| 代理商： | IS61C3216 |
ISSI
IS61C3216
Integrated Silicon Solution, Inc.
SR007-1B
01/26/98
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-10
-12
-15
-20
Symbol
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
HZOE
(2)
t
LZOE
(2)
t
HZCE
(2
t
LZCE
(2)
t
BA
t
HZB
t
LZB
Parameter
Min. Max.
Min. Max.
Min. Max.
Min. Max.
Unit
Read Cycle Time
10
—
12
—
15
—
20
—
ns
Address Access Time
—
10
—
12
—
15
—
20
ns
Output Hold Time
3
—
3
—
3
—
3
—
ns
CE
Access Time
—
10
—
12
—
15
—
20
ns
OE
Access Time
—
5
—
5
—
7
—
8
ns
OE
to High-Z Output
0
5
0
6
0
7
—
8
ns
OE
to Low-Z Output
0
—
0
—
0
—
0
—
ns
CE
to High-Z Output
0
5
0
6
0
7
0
8
ns
CE
to Low-Z Output
4
—
4
—
4
—
4
—
ns
LB
,
UB
Access Time
—
5
—
6
—
7
—
8
ns
LB
,
UB
to High-Z Output
0
5
0
6
0
7
—
8
ns
LB
,
UB
to Low-Z Output
5
—
5
—
5
—
5
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of
0 to 3.0V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured
±
500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1a and 1b
AC TEST LOADS
Figure 1a.
Figure 1b.
480
30 pF
Including
jig and
scope
255
OUTPUT
5V
480
5 pF
Including
jig and
scope
255
OUTPUT
5V
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
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| IS61C6416-15TI | 64K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C6416-20K | 64K x 16 HIGH-SPEED CMOS STATIC RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61C3216-10K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216-10T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216-12K | 制造商:Integrated Silicon Solution Inc 功能描述:Static RAM, 32Kx16, 44 Pin, Plastic, SOJ 制造商:NA 功能描述:Static RAM, 32Kx16, 44 Pin, Plastic, SOJ |
| IS61C3216-12KI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216-12T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
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