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參數(shù)資料
| 型號： | IS61C12816-15TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 16 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 128K X 16 STANDARD SRAM, 15 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 102K |
| 代理商： | IS61C12816-15TI |
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
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IS61C12816
ISSI
OPERATING RANGE
Range
Commercial
Ambient Temperature
0°C to +70°C
Speed
-12
-15, -20
-12
-15, -20
V
CC
5V ± 5%
5V ± 10%
5V ± 5%
5V ± 10%
Industrial
–40°C to +85°C
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-12
-15
-20
Symbol
Parameter
Test Conditions
Min. Max.
Min. Max.
Min. Max.
Unit
I
CC
Vcc Dynamic Operating
Supply Current
V
CC
= Max.,
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
280
—
—
300
260
—
—
290
235
—
mA
255
I
SB
1
TTL Standby Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = 0
Com.
Ind.
—
—
50
55
—
—
50
55
—
—
50
55
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
CC
= Max.,
CE
V
CC
– 0.2V,
V
IN
V
CC
– 0.2V, or
V
IN
- 0.2V, f = 0
Com.
Ind.
—
—
10
15
—
—
10
15
—
—
10
15
mA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –4.0 mA
2.4
—
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 8.0 mA
—
0.4
V
V
IH
Input HIGH Voltage
2.2
V
CC
+ 0.5
V
V
IL
Input LOW Voltage
(1)
–0.5
0.8
V
I
LI
Input Leakage
GND - V
IN
- V
CC
–2
2
μA
I
LO
Output Leakage
GND - V
OUT
- V
CC
, Outputs Disabled
–2
2
μA
Notes:
1. V
IL
(min.) = –3.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter
V
TERM
Terminal Voltage with Respect to GND
T
STG
Storage Temperature
P
T
Power Dissipation
I
OUT
DC Output Current (LOW)
Value
–0.5 to +7.0
–65 to +150
1.5
20
Unit
V
°C
W
mA
Note:
1. Stress greater than those listed under ABSO-
LUTE MAXIMUM RATINGS may cause per-
manent damage to the device. This is a stress
rating only and functional operation of the
device at these or any other conditions above
those indicated in the operational sections of
this specification is not implied. Exposure to
absolute maximum rating conditions for ex-
tended periods may affect reliability.
相關PDF資料 |
PDF描述 |
|---|---|
| IS61C12816-20K | 128K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C12816-20KI | 128K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C12816-20T | 128K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C12816-20TI | 128K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C25616 | 256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS61C12816-20K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C12816-20KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C12816-20T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C12816-20TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C180 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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