參數(shù)資料
型號: IS43R16160A
廠商: Integrated Silicon Solution, Inc.
英文描述: 16Meg x 16 256-MBIT DDR SDRAM
中文描述: 16Meg × 16 256兆位DDR SDRAM的
文件頁數(shù): 44/56頁
文件大?。?/td> 792K
代理商: IS43R16160A
44
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
The above characteristics are specified under best, worst and normal process variation/conditions
Figure 36 - DATA INPUT (WRITE) TIMING
DI
n
= Data In for column
n
Burst Length = 4 in the case shown
3 subsequent elements of Data In are applied in the programmed
order following DI
n
Figure 37 - DATA OUTPUT (READ) TIMING
1. tDQSQ max occurs when DQS is the earliest among DQS and DQ signals to transition.
2. tDQSQ min occurs when DQS is the latest among DQS and DQ signals to transition.
3. tDQSQ nom, shown for reference, occurs when DQS transitions in the center among DQ signal transitions.
DON'T CARE
DQ
DM
DQS
DI
n
tDS
tDH
tDS
tDH
tDSL
tDSH
t
min
DQSQ
t
max
DQSQ
DQ
DQS
t
min
DQSQ
t
max
DQSQ
t
nom
DQSQ
Burst Length = 4 in the case shown
tDV
DQS, DQ
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