參數(shù)資料
型號： IS43R16160A-6T
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 16Meg x 16 256-MBIT DDR SDRAM
中文描述： 16M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝： PLASTIC, TSOP2-66
文件頁數(shù)： 25/56頁
文件大?。?/td> 792K
代理商： IS43R16160A-6T
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
25
ISSI
IS43R16160A
TRUTH TABLE 3 – Current State Bank n - Command to Bank n
(Notes: 1-6; notes appear below and on next page)
NOTE:
1. This table applies when CKE
n-1
was HIGH and CKE
n
is HIGH (see Truth Table 2) and after
t
XSR
has been met (if the previous state was self refresh).
2. This table is bank-specific, except where noted, i.e., the current state is for a specific bank and the commands shown
are those allowed to be issued to that bank when in that state. Exceptions are covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, and
t
RP has been met.
Row Active: A row in the bank has been activated, and
t
RCD has been met.
No data bursts/accesses and no register accesses are in progress.
Read: A READ burst has been initiated, with AUTO PRECHARGE disabled,
and has not yet terminated or been terminated.
Write: A WRITE burst has been initiated, with AUTO PRECHARGE disabled,
and has not yet terminated or been terminated.
4. The following states must not be interrupted by a command issued to the same bank. DESELECT or NOP com-
mands,
or allowable commands to the other bank should be issued on any clock edge occurring during these states.
Allowable commands to the other bank are determined by its current state and Truth Table 3, and according to
Truth Table 4.
Precharging: Starts with registration of a PRECHARGE command and ends when
t
RP is
met. Once
t
RP is met, the bank will be in the idle state.
CURRENT STATE
/CS
/RAS
/CAS
/WE
COMMAND/ACTION
NOTES
Any
H
X
X
X
DESELECT (NOP/continue previous operation)
L
H
H
H
NO OPERATION (NOP/continue previous operation)
Idle
L
L
H
H
ACTIVE (select and activate row)
L
L
L
H
AUTO REFRESH
7
L
L
L
L
MODE REGISTER SET
7
Row Active
L
H
L
H
READ (select column and start READ burst)
10
L
H
L
L
WRITE (select column and start WRITE burst)
10
L
L
H
L
PRECHARGE (deactivate row in bank or banks)
8
Read (Auto Precharge
Disabled)
L
H
L
H
READ (select column and start new READ burst)
10
L
L
H
L
PRECHARGE (truncate READ burst, start PRECHARGE)
8
L
H
H
L
BURST TERMINATE
9
Write (Auto Precharge
Disabled)
L
H
L
H
READ (select column and start READ burst)
10, 11
L
H
L
L
WRITE (select column and start new WRITE burst)
10
L
L
H
L
PRECHARGE (truncate WRITE burst, start PRECHARGE)
8, 11
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IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM
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IS43R16320A-6TL 32Meg x 16 512-MBIT DDR SDRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS43R16160B 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5BI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5BL 功能描述:動態(tài)隨機存取存儲器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R16160B-5BLI 功能描述:動態(tài)隨機存取存儲器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R16160B-5BLI-TR 功能描述:動態(tài)隨機存取存儲器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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