參數(shù)資料
型號： IS43R16160A-5TL
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 16Meg x 16 256-MBIT DDR SDRAM
中文描述： 16M X 16 DDR DRAM, 0.65 ns, PDSO66
封裝： LEAD FREE, PLASTIC, TSOP2-66
文件頁數(shù)： 27/56頁
文件大小： 792K
代理商： IS43R16160A-5TL
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
27
ISSI
IS43R16160A
TRUTH TABLE 4 – Current State Bank n - Command to Bank m
(Notes: 1-6; notes appear below and on next page)
NOTE:
1. This table applies when CKE
n-1
was HIGH and CKE
n
is HIGH (see Truth Table 2) and after
t
XSR has been met
(if the previous state was self refresh).
2. This table describes alternate bank operation, except where noted, i.e., the current state is for bank
n
and the
commands shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given
command is allowable). Exceptions are covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, and
t
RP has been met.
Row Active: A row in the bank has been activated, and
t
RCD has been met. No data
bursts/accesses and no register accesses are in progress.
Read: A READ burst has been initiated, with AUTO PRECHARGE disabled, and
has not yet terminated or been terminated.
Write: A WRITE burst has been initiated, with AUTO PRECHARGE disabled, and
has not yet terminated or been terminated.
CURRENT STATE
/CS
/RAS /CAS
/WE
COMMAND/ACTION
NOTES
Any
H
X
X
X
DESELECT (NOP/continue previous operation)
L
H
H
H
NO OPERATION (NOP/continue previous operation)
Idle
X
X
X
X
Any Command Otherwise Allowed to Bank m
Row Activating,
Active, or Precharging
L
L
H
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start READ burst)
7
L
H
L
L
WRITE (select column and start WRITE burst)
7
L
L
H
L
PRECHARGE
Read
(Auto-Precharge
Disabled)
L
L
H
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start new READ burst)
7
L
L
H
L
PRECHARGE
Write
(Auto- Precharge
Disabled)
L
L
H
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start READ burst)
7, 8
L
H
L
L
WRITE (select column and start new WRITE burst)
7
L
L
H
L
PRECHARGE
Read
(With Auto-Precharge)
L
L
H
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start new READ burst)
3a, 7
L
H
L
L
WRITE (select column and start WRITE burst)
3a, 7, 9
L
L
H
L
PRECHARGE
Write
(With Auto-Precharge)
L
L
H
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start READ burst)
3a, 7
L
H
L
L
WRITE (select column and start new WRITE burst)
3a, 7
L
L
H
L
PRECHARGE
相關(guān)PDF資料
PDF描述
IS43R16160A-6T 16Meg x 16 256-MBIT DDR SDRAM
IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM
IS43R16320A 32Meg x 16 512-MBIT DDR SDRAM
IS43R16320A-6TL 32Meg x 16 512-MBIT DDR SDRAM
IS43R16800A-6 8Meg x 16 128-MBIT DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS43R16160A-6T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 16 256-MBIT DDR SDRAM
IS43R16160B 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5BI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5BL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R16160B-5BLI 功能描述:動(dòng)態(tài)隨機(jī)存取存儲器 256M (16Mx16) 400MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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