參數(shù)資料
型號(hào)： IS42VS16100C1
廠(chǎng)商： Integrated Silicon Solution, Inc.
英文描述： 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 為512k字× 16位× 2銀行（16兆）同步動(dòng)態(tài)RAM
文件頁(yè)數(shù)： 34/80頁(yè)
文件大?。?/td> 772K
代理商： IS42VS16100C1
IS42VS16100C1
ISSI
34
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00A
04/15/05
Write Cycle (Full Page) Interruption Using
the Burst Stop Command
The IS42VS16100C1 can input data continuously from
the burst start address (a) to location a+255 during a
write cycle in which the burst length is set to full page.
The IS42VS16100C1 repeats the operation starting at
the 256th cycle with data input returning to location (a)
and continuing with a+1, a+2, a+3, etc. A burst stop
command must be executed to terminate this cycle. A
precharge command
must be executed within the ACT to PRE command
period (t
RAS
max.) following the burst stop command.
After the period (t
WBD
) required for burst data input to
stop following the execution of the burst stop command
has elapsed, the write cycle terminates. This period
(t
WBD
) is zero clock cycles, regardless of the
CAS
latency.
Burst Data Interruption Using the U/LDQM
Pins (Read Cycle)
Burst data output can be temporarily interrupted (masked)
during a read cycle using the U/LDQM pins. Regardless of
the
CAS
latency, two clock cycles (t
QMD
) after one of the U/
LDQM pins goes HIGH, the corresponding outputs go to the
HIGH impedance state. Subsequently, the outputs are
maintained in the high impedance state as long as that U/
LDQM pin remains HIGH. When the U/LDQM pin goes
LOW, output is resumed at a time t
QMD
later. This output
control operates independently on a byte basis with the
UDQM pin controlling upper byte output (pins
DQ8-DQ15) and the LDQM pin controlling lower byte output
(pins DQ0 to DQ7).
Since the U/LDQM pins control the device output buffers
only, the read cycle continues internally and, in particular,
incrementing of the internal burst counter continues.
CAS
latency = 2, burstlength = 4
READ A0
COMMAND
UDQM
LDQM
DQ8-DQ15
DQ0-DQ 7
CLK
D
OUT
A0
t
QMD=2
HI-Z
HI-Z
HI-Z
READ (CA=A, BANK 0)
DATA MASK (LOWER BYTE)
DATA MASK (UPPER BYTE)
D
OUT
A2
D
OUT
A3
D
OUT
A1
D
OUT
A0
WRITE A0
COMMAND
DQ
CLK
D
IN
A0
D
IN
A1
D
IN
A
D
IN
A1
D
IN
A2
t
WBD=0
t
RP
READ (CA=A, BANK 0)
BURST STOP
BST
PRE 0
INVALID DATA
PRECHARGE (BANK 0)
Don't Care
相關(guān)PDF資料
PDF描述
IS42VS16100C1-10T 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16100C1-10TI 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16100C1-10TL 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-10T 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42VS16100C1-10T 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線(xiàn)寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪(fǎng)問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42VS16100C1-10TI 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線(xiàn)寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪(fǎng)問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42VS16100C1-10TI-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線(xiàn)寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪(fǎng)問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42VS16100C1-10TL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線(xiàn)寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪(fǎng)問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42VS16100C1-10TLI 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M 1.8V 1Mx16 100Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線(xiàn)寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪(fǎng)問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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