參數(shù)資料
型號(hào)： IS42S83200B
廠商： Integrated Silicon Solution, Inc.
英文描述： 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
中文描述： 32Meg × 8，16Meg x16 256兆位同步DRAM
文件頁數(shù)： 47/62頁
文件大?。?/td> 646K
代理商： IS42S83200B
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00E
05/25/06
47
ISSI
IS42S83200B, IS42S16160B
CLK
CKE
HIGH
ALL BANKS
BANK SELECT
BANK ADDRESS
CS
RAS
CAS
WE
A0-A9, A11, A12
A10
BA0, BA1
DON'T CARE
CLK
CKE
COMMAND
NOP
NOP
ACTIVE
≥
t
CKS
t
CKS
All banks idle
Enter
power-down mode
Exit power-down mode
t
RCD
t
RAS
t
RC
Input buffers gated
off
less than 64ms
PRECHARGE Command
POWER-DOWN
POWER-DOWN
Power-down occurs if CKE is registered LOW coincident
with a NOP or COMMAND INHIBIT when no accesses are
in progress. If power-down occurs when all banks are idle,
this mode is referred to as precharge power-down; if power-
down occurs when there is a row active in either bank, this
mode is referred to as active power-down. Entering power-
down deactivates the input and output buffers, excluding
CKE, for maximum power savings while in standby. The
device may not remain in the power-down state longer than
the refresh period (64ms) since no refresh operations are
performed in this mode.
The power-down state is exited by registering a NOP or
COMMAND INHIBIT and CKE HIGH at the desired clock
edge (meeting t
CKS
). See figure below.
PRECHARGE
The PRECHARGE command (see figure) is used to deac-
tivate the open row in a particular bank or the open row in all
banks. The bank(s) will be available for a subsequent row
access some specified time (t
RP
) after the PRECHARGE
command is issued. Input A10 determines whether one or
all banks are to be precharged, and in the case where only
one bank is to be precharged, inputs BA0, BA1 select the
bank. When all banks are to be precharged, inputs BA0,
BA1 are treated as “Don’t Care.” Once a bank has been
precharged, it is in the idle state and must be activated prior
to any READ or WRITE commands being issued to that
bank.
相關(guān)PDF資料
PDF描述
IS42S83200B-6T 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S83200B-6TL 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S83200B-7T 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S83200B-7TI 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S83200B-7TL 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S83200B-6T 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M 3.3v 32Mx8 166MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S83200B-6TL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M 3.3v 32Mx8 166MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S83200B-6TLI 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M (32Mx8) 166MHz Industrial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S83200B-6TLI-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M (32Mx8) 166MHz Industrial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S83200B-6TL-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M 3.3v 32Mx8 166MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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