- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377551 > IS42S81600B-6T (INTEGRATED SILICON SOLUTION INC) 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM PDF資料下載
參數(shù)資料
| 型號： | IS42S81600B-6T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | 0.400 INCH, TSOP2-54 |
| 文件頁數(shù)： | 11/60頁 |
| 文件大?。?/td> | 585K |
| 代理商： | IS42S81600B-6T |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁當前第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. E
05/01/06
11
ISSI
IS42S81600B, IS42S16800B
Current State
Write Recovering
CS
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
RAS
×
H
H
H
H
L
L
L
L
×
H
H
H
H
L
L
L
L
×
H
H
H
L
L
L
L
×
H
H
H
L
CAS
×
H
H
L
L
H
H
L
L
×
H
H
L
L
H
H
L
L
×
H
L
L
H
H
L
L
×
H
H
L
×
WE
×
H
L
H
L
H
L
H
L
×
H
L
H
L
H
L
H
L
×
×
H
L
H
L
H
L
×
H
L
×
×
Address
×
×
×
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
×
OC, BA
×
×
×
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
×
OC, BA
×
×
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
×
OC, BA
×
×
×
BA, CA, A10
BA, RA
Command
DESL
NOP
BST
READ/READA
WRIT/ WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP/BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/WRITE
ACT/PRE/PALL
REF/MRS
Action
Nop, Enter row active after tDPL
Nop, Enter row active after tDPL
Nop, Enter row active after tDPL
Begin read
(8)
Begin new write
ILLEGAL
(3)
ILLEGAL
(3)
ILLEGAL
ILLEGAL
Nop, Enter precharge after tDPL
Nop, Enter precharge after tDPL
Nop, Enter row active after tDPL
ILLEGAL
(3,8,11)
ILLEGAL
(3,11)
ILLEGAL
(3,11)
ILLEGAL
(3,11)
ILLEGAL
ILLEGAL
Nop, Enter idle after tRC
Nop, Enter idle after tRC
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
Nop, Enter idle after 2 clocks
Nop, Enter idle after 2 clocks
ILLEGAL
ILLEGAL
ILLEGAL
Write Recovering
with Auto
Precharge
Refresh
Mode Register
Accessing
FUNCTIONAL TRUTH TABLE Continued:
Note: H=V
IH
, L=V
IL
x= V
IH
or V
IL
, V = Valid Data, BA= Bank Address, CA+Column Address, RA=Row Address, OC= Op-Code
Notes:
1. All entries assume that CKE is active (CKEn-1=CKEn=H).
2. If both banks are idle, and CKE is inactive (Low), the device will enter Power Down mode. All input buffers except CKE will
be disabled.
3. Illegal to bank in specified states; Function may be legal in the bank indicated by Bank Address (BA), depending on the
state of that bank.
4. If both banks are idle, and CKE is inactive (Low), the device will enter Self-Refresh mode. All input buffers except CKE will
be disabled.
5. Illegal if tRCD is not satisfied.
6. Illegal if tRAS is not satisfied.
7. Must satisfy burst interrupt condition.
8. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
9. Must mask preceding data which don’t satisfy tDPL.
10. Illegal if tRRD is not satisfied.
11. Illegal for single bank, but legal for other banks.
相關PDF資料 |
PDF描述 |
|---|---|
| IS42S81600B-6TL | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600B-7T | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600B-7TI | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600B-7TL | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600B-7TLI | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S81600B-6TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600B-7T | 功能描述:動態(tài)隨機存取存儲器 128M 16Mx8 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S81600B-7TI | 功能描述:動態(tài)隨機存取存儲器 128M 16Mx8 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S81600B-7TI-TR | 功能描述:動態(tài)隨機存取存儲器 128M 16Mx8 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S81600B-7TL | 功能描述:動態(tài)隨機存取存儲器 128M 16Mx8 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。