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參數(shù)資料
| 型號： | IS42S81600A |
| 英文描述： | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16Meg × 8，8Meg x16 |
| 文件頁數(shù)： | 61/65頁 |
| 文件大?。?/td> | 556K |
| 代理商： | IS42S81600A |
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65
XMEGA C3 [DATASHEET]
8361D–AVR–07/2013
35.
Electrical Characteristics
All typical values are measured at T = 25
C unless other temperature condition is given. All minimum and maximum
values are valid across operating temperature and voltage unless other conditions are given.
35.1 Absolute Maximum Ratings
Stresses beyond those listed in Table 35-1 under may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or other conditions beyond those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Table 35-1. Absolute maximum ratings.
35.2 General Operating Ratings
The device must operate within the ratings listed in Table 35-2 in order for all other electrical characteristics and typical
characteristics of the device to be valid.
Table 35-2. General operating conditions.
Table 35-3. Operating voltage and frequency.
Symbol
Parameter
Condition
Min.
Typ.
Max.
Units
VCC
Power supply voltage
-0.3
4
V
IVCC
Current into a VCC pin
200
mA
IGND
Current out of a Gnd pin
200
VPIN
Pin voltage with respect to
Gnd and VCC
-0.5
VCC+0.5
V
IPIN
I/O pin sink/source current
-25
25
mA
TA
Storage temperature
-65
150
°C
Tj
Junction temperature
150
Symbol
Parameter
Condition
Min.
Typ.
Max.
Units
VCC
Power supply voltage
1.60
3.6
V
AVCC
Analog supply voltage
1.60
3.6
TA
Temperature range
-40
85
°C
Tj
Junction temperature
-40
105
Symbol
Parameter
Condition
Min.
Typ.
Max.
Units
ClkCPU
CPU clock frequency
VCC = 1.6V
0
12
MHz
VCC = 1.8V
0
12
VCC = 2.7V
0
32
VCC = 3.6V
0
32
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42S81600A-10T | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600A-10TI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IC42S81600L-7T(G) | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-7TI(G) | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-8T(G) | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S81600A-10T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600A-10TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600A-10TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600A-6T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600A-6TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
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