參數資料
型號： IS42S81600A-7TL
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
中文描述： 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝： LEAD FREE, PLASTIC, TSOP2-54
文件頁數： 11/65頁
文件大?。?/td> 556K
代理商： IS42S81600A-7TL
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
19
ADVANCEDINFORMATION
Rev. 00A
06/01/02
ISSI
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.)
Symbol
Parameter
TestCondition
Speed
Min.
Max.
Unit
IIL
InputLeakageCurrent
0V
≤VIN≤VDD,withpinsotherthan
–5
5
A
the tested pin at 0V
IOL
OutputLeakageCurrent
Outputisdisabled,0V
≤VOUT≤VDD
–5
5
A
VOH
OutputHighVoltageLevel
IOUT=–2mA
2.4
—
V
VOL
OutputLowVoltageLevel
IOUT=+2mA
—
0.4
V
IDD1
OperatingCurrent(1,2)
OneBankOperation,
CASlatency=3
BurstLength=1
Com.
-7
—
120
mA
tRC
≥tRC(min.)
Ind.
-7
—
140
mA
IOUT=0mA
Com.
-10
—
110
mA
Ind.
-10
—
120
mA
IDD2P
PrechargeStandbyCurrent
CKE
≤VIL (MAX)tCK=tCK(MIN)
Com.
—
1
mA
Ind.
—
1
mA
IDD2PS
(InPower-DownMode)
tCK =
∞
Com.
—
.6
mA
Ind.
—
.6
mA
IDD2N
PrechargeStandbyCurrent
CKE
≥VIH(MIN)tCK=tCK(MIN)—
—
11
mA
IDD2NS
(InNonPower-DownMode)
tCK =
∞
Com.
—
5
mA
Ind.
—
7
mA
IDD3P
ActiveStandbyCurrent
CKE
≤VIL(MAX)tCK=tCK(MIN)
Com.
—
4
mA
Ind.
—
6
mA
IDD3PS
(InPower-DownMode)
tCK =
∞
Com.
—
3
mA
Ind.
—
5
mA
IDD3N
ActiveStandbyCurrent
CKE
≥VIH(MIN)tCK=tCK(MIN)—
—
28
mA
IDD3NS
(InNonPower-DownMode)
tCK =
∞
Com.
—
17
mA
Ind.
—
20
mA
IDD4
OperatingCurrent
tCK =tCK(MIN)
CASlatency=3
(InBurstMode)(1)
IOUT=0mA
Com.
-7
—
120
mA
Ind.
-7
—
140
mA
Com.
-10
—
110
mA
Ind.
-10
—
120
mA
CASlatency=2
Com.
-7
—
90
mA
Ind.
-7
—
110
mA
Com.
-10
—
80
mA
Ind.
-10
—
100
mA
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 F should be inserted between Vdd and Vss for each memory
chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Idd1 and Idd4 depend on the output load. The maximum values for Idd1 and Idd4 are obtained with the output open state.
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參數描述
IS42S81600A-7TLI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600AL-7TL 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S81600B-6T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S81600B-6TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S81600B-7T 功能描述:動態(tài)隨機存取存儲器 128M 16Mx8 143Mhz RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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