參數(shù)資料
型號： IS42S32800B-7TLI
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
封裝： 0.400 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86
文件頁數(shù)： 1/62頁
文件大?。?/td> 939K
代理商： IS42S32800B-7TLI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev.
B
0
5/24
/06
1
ISSI
IS42S32800B
2M Words x 32 Bits x 4 Banks (256-MBIT)
SYNCHRONOUS DYNAMIC RAM
FEATURES
· Concurrent auto precharge
· Clock rate:166/143 MHz
· Fully synchronous operation
· Internal pipelined architecture
· Four internal banks (2M x 32bit x 4bank)
· Programmable Mode
-CAS#Latency:2 or 3
-Burst Length:1,2,4,8,or full page
-Burst Type:interleaved or linear burst
-Burst-Read-Single-Write
· Burst stop function
· Individual byte controlled by DQM0-3
· Auto Refresh and Self Refresh
· 4096 refresh cycles/64ms (15.6
μ
s/row)
· Single +3.3V ±0.3V power supply
· Interface:LVTTL
· Package: 86 Pin TSOP-2,0.50mm Pin Pitch
8x13mm, 90 Ball BGA, Ball pitch 0.8mm
· Pb-free package is available.
DESCRIPTION
The
I
S
SI
I
S42S32800B
is a high-speed
CMOS
configured as a quad 2M x 32 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal,CLK).
Each of the 2M x 32 bit banks is organized as 4096 rows
by 512 columns by 32 bits.Read and write accesses start
at a selected locations in a programmed sequence.
Accesses begin with the registration of a BankActive
command which is then followed by a Read or Write
command
The
I
S
SI
IS42S32800B
provides for
programmable
Read or Write burst lengths of 1,2,4,8,or
full page, with
a burst termination operation. An auto
precharge
function may be enable to provide a self-timed
row
precharge that is initiated at the end of the burst
sequence.The refresh functions,
either Auto o
r
Self
Refresh are easy to use.
By having a programmable mode register,the system
can choose the most suitable modes to maximize its
performance.
These devices are well suited for applications requiring
high memory bandwidth.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S32800B-7TLI-TR 功能描述:動態(tài)隨機(jī)存取存儲器 256M 8Mx32 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32800B-7TL-TR 功能描述:動態(tài)隨機(jī)存取存儲器 256M 8Mx32 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32800B-7T-TR 功能描述:動態(tài)隨機(jī)存取存儲器 256M 8Mx32 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32800D 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:8M x 32 256Mb SYNCHRONOUS DRAM
IS42S32800D-6B 功能描述:動態(tài)隨機(jī)存取存儲器 256M (8Mx32) 166MHz S動態(tài)隨機(jī)存取存儲器, 3.3v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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