參數(shù)資料
型號(hào): IS42S32400B-6TL
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
中文描述: 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
封裝: LEAD FREE, TSOP2-86
文件頁(yè)數(shù): 34/60頁(yè)
文件大小: 644K
代理商: IS42S32400B-6TL
ISSI
34
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00G
06/15/06
IS42S32400B
READ - FULL-PAGE BURST
DON'T CARE
UNDEFINED
CLK
CKE
COMMAND
DQM0 - DQM3
A0-A9, A11
A10
BA0, BA1
DQ
t
CMS
t
CMH
ACTIVE
NOP
READ
NOP
NOP
NOP
NOP
NOP
BURST TERM
NOP
NOP
t
AS
t
AH
t
AS
t
AH
t
AS
t
AH
ROW
ROW
BANK
COLUMN m
(2)
t
CH
t
CL
t
CK
t
CMS
t
CMH
t
CKS
t
CKH
BANK
t
RCD
CAS Latency
t
AC
t
AC
t
AC
t
AC
t
AC
t
HZ
t
LZ
t
AC
t
OH
each row (x4) has
1,024 locationsFull page
t
OH
t
OH
t
OH
t
OH
t
OH
D
OUT
m
D
OUT
m+
1
D
OUT
m+
2
D
OUT
m-
1
D
OUT
m
D
OUT
m+
1
completion
Full-page burst not self-terminating.
Use BURST TERMINATE command.
T0
T1
T2
T3
T4
T5
T6
Tn+1
Tn+2
Tn+3
Tn+4
Notes:
1)
CAS
latency = 2, Burst Length = Full Page
2) X32: A8, A9, A11 = "Don't Care"
相關(guān)PDF資料
PDF描述
IS42S32400B-6TLI 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400B-7B 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400B-7BI 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400B-7BL 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400B-7BLI 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S32400B-6TLI 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 86-Pin TSOP-II
IS42S32400B-6TL-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M (4Mx32) 166MHz Commercial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32400B-6T-TR 制造商:Integrated Silicon Solution Inc 功能描述:IC SDRAM 128MBIT 166MHZ 86TSOP
IS42S32400B-7B 制造商:Integrated Silicon Solution Inc 功能描述:IC SDRAM 128MBIT 143MHZ 90FBGA
IS42S32400B-7BI 制造商:Integrated Silicon Solution Inc 功能描述:IC SDRAM 128MBIT 143MHZ 90FBGA