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| 型號(hào)： | IS42S32400B-6BL |
| 廠(chǎng)商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 |
| 封裝： | LEAD FREE, FBGA-90 |
| 文件頁(yè)數(shù)： | 10/60頁(yè) |
| 文件大?。?/td> | 644K |
| 代理商： | IS42S32400B-6BL |
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ISSI
10
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00G
06/15/06
IS42S32400B
Current State
Read with auto
Precharging
CS
H
RAS
×
CAS
×
WE
×
Address
×
Command
DESL
Action
Continue burst to end, Precharge
L
L
L
L
L
L
L
L
H
H
H
H
H
L
L
L
L
×
H
H
L
L
H
H
L
L
×
H
L
H
L
H
L
H
L
×
x
×
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
×
OC, BA
×
NOP
BST
READ/READA
WRIT/ WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
Continue burst to end, Precharge
ILLEGAL
ILLEGAL
(11)
ILLEGAL
(11)
ILLEGAL
(3)
ILLEGAL
(11)
ILLEGAL
ILLEGAL
Continue burst to end, Write
recovering with auto precharge
Continue burst to end, Write
recovering with auto precharge
ILLEGAL
ILLEGAL
(11)
ILLEGAL
(11)
ILLEGAL
(3,11)
ILLEGAL
(3,11)
ILLEGAL
ILLEGAL
Nop, Enter idle after tRP
Nop, Enter idle after tRP
Nop, Enter idle after tRP
ILLEGAL
(3)
ILLEGAL
(3)
ILLEGAL
(3)
Nop Enter idle after tRP
ILLEGAL
ILLEGAL
Nop, Enter bank active after tRCD
Nop, Enter bank active after tRCD
Nop, Enter bank active after tRCD
ILLEGAL
(3)
ILLEGAL
(3)
ILLEGAL
(3,9)
ILLEGAL
(3)
ILLEGAL
ILLEGAL
Write with Auto
Precharge
L
H
H
H
×
NOP
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
H
H
L
L
L
L
×
H
H
H
H
L
L
L
L
×
H
H
H
H
L
L
L
L
H
L
L
H
H
L
L
×
H
H
L
L
H
H
L
L
×
H
H
L
L
H
H
L
L
L
H
L
H
L
H
L
×
H
L
H
L
H
L
H
L
×
H
L
H
L
H
L
H
L
×
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
×
OC, BA
×
×
×
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
×
OC, BA
×
×
×
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
×
OC, BA
BST
READ/READA
WRIT/ WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
Precharging
Row Activating
FUNCTIONAL TRUTH TABLE Continued:
Note: H=V
IH
, L=V
IL
x= V
IH
or V
IL
, V = Valid Data, BA= Bank Address, CA+Column Address, RA=Row Address, OC= Op-Code
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42S32400B-6T | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400B-6TI | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400B-6TL | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400B-6TLI | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400B-7B | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S32400B-6BL-TR | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M (4Mx32) 166MHz Commercial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線(xiàn)寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪(fǎng)問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S32400B-6B-TR | 制造商:Integrated Silicon Solution Inc 功能描述:IC SDRAM 128MBIT 166MHZ 90FBGA |
| IS42S32400B-6T | 制造商:Integrated Silicon Solution Inc 功能描述:IC SDRAM 128MBIT 166MHZ 86TSOP |
| IS42S32400B-6TI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400B-6TL | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M (4Mx32) 166MHz Commercial Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線(xiàn)寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪(fǎng)問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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