參數(shù)資料
型號： IS42S32200C1
廠商： Integrated Silicon Solution, Inc.
英文描述： 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 為512k位× 32位× 4銀行（64兆位）同步動(dòng)態(tài)RAM
文件頁數(shù)： 17/59頁
文件大?。?/td> 623K
代理商： IS42S32200C1
IS42S32200C1
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00E
05/18/06
17
Activating Specific Row Within Specific Bank
DON'T CARE
CLK
COMMAND
ACTIVE
NOP
NOP
t
RCD
T0
T1
T2
T3
T4
READ or
WRITE
OPERATION
BANK/ROW ACTIVATION
Before any READ or WRITE commands can be issued to
a bank within the SDRAM, a row in that bank must be
“opened.”
This is accomplished via the ACTIVE command,
which selects both the bank and the row to be activated
(see
Activating Specific Row Within Specific Bank
).
After opening a row
(issuing an ACTIVE command)
, a READ
or WRITE command may be issued to that row, subject to
the t
RCD
specification. Minimum t
RCD
should be divided by
the clock period and rounded up to the next whole number
to determine the earliest clock edge after the ACTIVE
command on which a READ or WRITE command can be
entered. For example, a t
RCD
specification of 20ns with a
125 MHz clock (8ns period) results in 2.5 clocks, rounded
to 3. This is reflected in the following example, which
covers any case where 2 < [t
RCD
(MIN)/t
CK
]
≤
3. (The
same procedure is used to convert other specification
limits from time units to clock cycles).
A subsequent ACTIVE command to a different row in the
same bank can only be issued after the previous active
row has been “closed” (precharged). The minimum time
interval between successive ACTIVE commands to the
same bank is defined by t
RC
.
A subsequent ACTIVE command to another bank can be
issued while the first bank is being accessed, which
results in a reduction of total row-access overhead. The
minimum time interval between successive ACTIVE com-
mands to different banks is defined by t
RRD
.
Example: Meeting t
RCD
(MIN) when 2
<
[t
RCD
(min)/t
CK
]
≤
3
CLK
CKE
HIGH - Z
ROW ADDRESS
BANK ADDRESS
CS
RAS
CAS
WE
A0-A10
BA0, BA1
相關(guān)PDF資料
PDF描述
IS42S32200C1-55T 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200C1-55TL 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200C1-6BL 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200C1-6T 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200C1-6TI 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S32200C1-55T 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 64M 2Mx32 183Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32200C1-55TL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 64M 2Mx32 183Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32200C1-55TL-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 64M 2Mx32 183Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32200C1-55T-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 64M 2Mx32 183Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32200C1-6BL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
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