參數(shù)資料
型號： IS42S32200C1-7BI
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
封裝： 8 X 13 MM, 0.80 MM PITCH, MINI, FBGA-90
文件頁數(shù)： 19/59頁
文件大小： 623K
代理商： IS42S32200C1-7BI
IS42S32200C1
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00E
05/18/06
19
DON'T CARE
UNDEFINED
CLK
COMMAND
DQ
READ
NOP
NOP
NOP
CAS Latency - 3
t
AC
t
OH
D
OUT
T0
T1
T2
T3
T4
t
LZ
CLK
COMMAND
DQ
READ
NOP
NOP
CAS Latency - 2
t
AC
t
OH
D
OUT
T0
T1
T2
T3
t
LZ
CAS Latency
same bank. The PRECHARGE command should be issued
x
cycles before the clock edge at which the last desired
data element is valid, where
x
equals the CAS latency
minus one. This is shown in the READ to PRECHARGE
diagram for each possible CAS latency; data element
n
+
3 is either the last of a burst of four or the last desired of a
longer burst. Following the PRECHARGE command, a
subsequent command to the same bank cannot be issued
until t
RP
is met. Note that part of the row precharge time is
hidden during the access of the last data element(s).
In the case of a fixed-length burst being executed to
completion, a PRECHARGE command issued at the
optimum time (as described above) provides the same
operation that would result from the same fixed-length
burst with auto precharge. The disadvantage of the
PRECHARGE command is that it requires that the com-
mand and address buses be available at the appropriate
time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate
fixed-length or full-page bursts.
Full-page READ bursts can be truncated with the BURST
TERMINATE command, and fixed-length READ bursts
may be truncated with a BURST TERMINATE command,
provided that auto precharge was not activated. The
BURST TERMINATE command should be issued
x
cycles
before the clock edge at which the last desired data
element is valid, where
x
equals the CAS latency minus
one. This is shown in the READ Burst Termination
diagram for each possible CAS latency; data element
n
+
3 is the last desired data element of a longer burst.
相關(guān)PDF資料
PDF描述
IS42S32200C1-7BL 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200C1-7BLI 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200C1-7T 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200C1-7TI 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200C1-7TL 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S32200C1-7BI-TR 功能描述:動態(tài)隨機(jī)存取存儲器 64M 2Mx32 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32200C1-7BL 功能描述:動態(tài)隨機(jī)存取存儲器 64M 2Mx32 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32200C1-7BLI 功能描述:動態(tài)隨機(jī)存取存儲器 64M 2Mx32 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32200C1-7BLI-TR 功能描述:動態(tài)隨機(jī)存取存儲器 64M 2Mx32 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS42S32200C1-7BL-TR 功能描述:動態(tài)隨機(jī)存取存儲器 64M 2Mx32 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*