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參數(shù)資料
| 型號： | IS42S32200C1-55TL |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86 |
| 封裝： | 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-86 |
| 文件頁數(shù)： | 29/59頁 |
| 文件大小： | 623K |
| 代理商： | IS42S32200C1-55TL |
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IS42S32200C1
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00E
05/18/06
29
CLK
CKE
HIGH - Z
ALL BANKS
BANK SELECT
BANK ADDRESS
CS
RAS
CAS
WE
A0-A9
A10
BA0, BA1
DON'T CARE
CLK
CKE
COMMAND
NOP
NOP
ACTIVE
≥
t
CKS
t
CKS
All banks idle
Enter
power-down mode
Exit power-down mode
t
RCD
t
RAS
t
RC
Input buffers gated
off
PRECHARGE Command
POWER-DOWN
POWER-DOWN
Power-down occurs if CKE is registered LOW coincident
with a NOP or COMMAND INHIBIT when no accesses are
in progress. If power-down occurs when all banks are idle,
this mode is referred to as precharge power-down; if power-
down occurs when there is a row active in either bank, this
mode is referred to as active power-down. Entering power-
down deactivates the input and output buffers, excluding
CKE, for maximum power savings while in standby. The
device may not remain in the power-down state longer than
the refresh period (64ms) since no refresh operations are
performed in this mode.
The power-down state is exited by registering a NOP or
COMMAND INHIBIT and CKE HIGH at the desired clock
edge (meeting t
CKS
). See figure below.
PRECHARGE
The PRECHARGE command (see figure) is used to
deactivate the open row in a particular bank or the open
row in all banks. The bank(s) will be available for a
subsequent row access some specified time (t
RP
) after
the PRECHARGE command is issued. Input A10 deter-
mines whether one or all banks are to be precharged, and
in the case where only one bank is to be precharged,
inputs BA0, BA1 select the bank. When all banks are to be
precharged, inputs BA0, BA1 are treated as “Don’t Care.”
Once a bank has been precharged, it is in the idle state and
must be activated prior to any READ or WRITE com-
mands being issued to that bank.
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| IS42S32200C1-6BL | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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| IS42S32200C1-6TI | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200C1-6TL | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200C1-6TLI | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S32200C1-55TL-TR | 功能描述:動態(tài)隨機存取存儲器 64M 2Mx32 183Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S32200C1-55T-TR | 功能描述:動態(tài)隨機存取存儲器 64M 2Mx32 183Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S32200C1-6BL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200C1-6BLI | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 90-Pin Mini-BGA |
| IS42S32200C1-6T | 功能描述:動態(tài)隨機存取存儲器 64M 2Mx32 166Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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