- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377550 > IS42S16400-10T (INTEGRATED SILICON SOLUTION INC) 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | IS42S16400-10T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54 |
| 封裝： | 0.400 INCH, TSOP2-54 |
| 文件頁(yè)數(shù)： | 11/54頁(yè) |
| 文件大?。?/td> | 580K |
| 代理商： | IS42S16400-10T |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)當(dāng)前第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)
IS42S16400
ISSI
Integrated Silicon Solution, Inc.
—
1-800-379-4774
TARGET SPECIFICATION
Rev. C
05/04/01
11
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
CC
MAX
V
CCQ
V
IN
V
OUT
P
D
MAX
I
CS
T
OPR
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
–
1.0 to +4.6
–
1.0 to +4.6
–
1.0 to +4.6
–
1.0 to +4.6
1
50
0 to +70
–
40 to +85
–
55 to +150
V
V
V
V
W
mA
°
C
MAX
Com.
Ind.
T
STG
Storage Temperature
°
C
DC RECOMMENDED OPERATING CONDITIONS
(2)
(
At T
A
= 0 to +70
°
C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
, V
CCQ
V
IH
V
IL
Supply Voltage
Input High Voltage
Input Low Voltage
3.0
2.0
-0.3
3.3
—
—
3.6
V
V
V
V
CC
+ 0.3
+0.8
CAPACITANCE CHARACTERISTICS
(1,2)
(At T
A
= 0 to +25
°
C, Vcc = Vcc
Q
= 3.3 ± 0.3V, f = 1 MHz)
Symbol
Parameter
Typ.
Max.
Unit
C
IN1
C
IN2
CI/O
Input Capacitance: A0-A11, BA0, BA1
Input Capacitance: (CLK, CKE,
CS
,
RAS
,
CAS
,
WE
, LDQM, UDQM)
Data Input/Output Capacitance: I/O0-I/O15
—
—
—
4
4
5
pF
pF
pF
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
2. All voltages are referenced to GND.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42S16400-10TI | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16400-6T | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16400-7T | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16400-7TI | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16800A1 | 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S16400-10TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16400-6T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16400-7T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16400-7TI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42S16400A | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。