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參數(shù)資料
| 型號： | IS41LV16257-60K |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| 中文描述： | 256K X 16 FAST PAGE DRAM, 60 ns, PDSO40 |
| 封裝： | 0.400 INCH, SOJ-40 |
| 文件頁數(shù)： | 8/17頁 |
| 文件大小： | 160K |
| 代理商： | IS41LV16257-60K |
IS41C16257
IS41LV16257
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
DR004-1B
05/24/99
ISSI
AC CHARACTERISTICS
(1,2,3,4,5,6)
(Recommended Operating Conditions unless
otherwise noted.)
-35
-60
Symbol
Parameter
Min. Max.
Min. Max.
Units
t
ACH
Column-Address Setup Time to
CAS
Precharge during WRITE Cycle
OE
Hold Time from
WE
during
READ-MODIFY-WRITE cycle
(18)
Data-In Setup Time
(15, 22)
Data-In Hold Time
(15, 22)
READ-MODIFY-WRITE Cycle Time
RAS
to
WE
Delay Time during
READ-MODIFY-WRITE Cycle
(14)
CAS
to
WE
Delay Time
(14, 20)
Column-Address to
WE
Delay Time
(14)
Fast Page Mode READ or WRITE
Cycle Time
(24)
RAS
Pulse Width
Access Time from
CAS
Precharge
(15)
READ-WRITE Cycle Time
(24)
Output Buffer Turn-Off Delay from
CAS
or
RAS
(13,15,19, 29)
Output Disable Delay from
WE
Last
CAS
going LOW to First
CAS
returning HIGH
(23)
CAS
Setup Time (CBR REFRESH)
(30, 20)
CAS
Hold Time (CBR REFRESH)
(30, 21)
OE
Setup Time prior to
RAS
during
HIDDEN REFRESH Cycle
Refresh Period (512 Cycles)
Transition Time (Rise or Fall)
(2, 3)
15
—
15
—
ns
t
OEH
8
—
15
—
ns
t
DS
t
DH
t
RWC
t
RWD
0
6
80
45
—
—
—
—
0
10
140
80
—
—
—
—
ns
ns
ns
ns
t
CWD
t
AWD
t
PC
25
30
12
—
—
—
36
49
25
—
—
—
ns
ns
ns
t
RASP
t
CPA
t
PRWC
t
OFF
35
—
40
3
100K
21
—
15
60
—
56
3
100K
34
—
15
ns
ns
ns
ns
t
WHZ
t
CLCH
3
10
15
—
3
10
15
—
ns
ns
t
CSR
t
CHR
t
ORD
8
8
0
—
—
—
10
10
0
—
—
—
ns
ns
ns
t
REF
t
T
—
1
8
50
—
1
8
50
ms
ns
相關PDF資料 |
PDF描述 |
|---|---|
| IS41LV16257-60KI | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257-60T | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257-60TI | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16400 | 4M x 16 DRAM With EDO Page Mode(3.3V,4M x 16 帶擴展數(shù)據(jù)輸出頁模式動態(tài)RAM) |
| IS41LV32256 | 256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32帶擴展數(shù)據(jù)輸出動態(tài)RAM) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV16257-60KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257-60T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257-60TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257B-35K | 功能描述:動態(tài)隨機存取存儲器 4M 256Kx16 35ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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