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參數(shù)資料
| 型號： | IS41LV16256-60K |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 256K X 16 EDO DRAM, 60 ns, PDSO40 |
| 封裝： | 0.400 INCH, MS-027, SOJ-40 |
| 文件頁數(shù)： | 3/19頁 |
| 文件大小： | 153K |
| 代理商： | IS41LV16256-60K |
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. J
06/29/00
3
IS41C16256
IS41LV16256
ISSI
TRUTH TABLE
Function
RAS
LCAS
UCAS
WE
OE
Address t
R
/t
C
I/O
Standby
H
H
H
X
X
X
High-Z
Read: Word
L
L
L
H
L
ROW/COL
D
OUT
Read: Lower Byte
L
L
H
H
L
ROW/COL
Lower Byte, D
OUT
Upper Byte, High-Z
Read: Upper Byte
L
H
L
H
L
ROW/COL
Lower Byte, High-Z
Upper Byte, D
OUT
Write: Word (Early Write)
L
L
L
L
X
ROW/COL
D
IN
Write: Lower Byte (Early Write)
L
L
H
L
X
ROW/COL
Lower Byte, D
IN
Upper Byte, High-Z
Write: Upper Byte (Early Write)
L
H
L
L
X
ROW/COL
Lower Byte, High-Z
Upper Byte, D
IN
Read-Write
(1,2)
L
L
L
H
→
L
H
H
H
L
→
H
L
L
L
ROW/COL
D
OUT
, D
IN
EDO Page-Mode Read
(2)
1st Cycle:
L
L
L
H
→
L
H
→
L
L
→
H
H
→
L
H
→
L
H
→
L
H
→
L
L
L
H
→
L
H
→
L
L
→
H
H
→
L
H
→
L
H
→
L
H
→
L
L
L
ROW/COL
NA/COL
NA/NA
D
OUT
D
OUT
D
OUT
2nd Cycle:
Any Cycle:
EDO Page-Mode Write
(1)
1st Cycle:
L
L
L
L
X
X
ROW/COL
NA/COL
D
IN
D
IN
2nd Cycle:
EDO Page-Mode
Read-Write
(1,2)
1st Cycle:
2nd Cycle:
Read L
→
H
→
L
Write L
→
H
→
L
L
L
H
→
L
H
→
L
H
L
L
→
H
L
→
H
L
X
ROW/COL
NA/COL
D
OUT
, D
IN
D
OUT
, D
IN
Hidden Refresh
2)
ROW/COL
ROW/COL
D
OUT
D
OUT
RAS
-Only Refresh
L
H
H
X
X
ROW/NA
High-Z
CBR Refresh
(3)
H
→
L
L
L
X
X
X
High-Z
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either
LCAS
or
UCAS
active).
2. These READ cycles may also be BYTE READ cycles (either
LCAS
or
UCAS
active).
3. At least one of the two
CAS
signals must be active (
LCAS
or
UCAS
).
相關PDF資料 |
PDF描述 |
|---|---|
| IS41LV16256-60KI | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60T | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60TI | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256 | 256K x 16 DRAM With EDO Page Mode(3.3V,256K x 16 帶擴展數(shù)據(jù)輸出頁模式動態(tài)RAM) |
| IS41LV16257 | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV16256-60KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256-60TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256B-35K | 功能描述:動態(tài)隨機存取存儲器 4M 256Kx16 35ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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