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參數(shù)資料
| 型號： | IS41C16257-60TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| 中文描述： | 256K X 16 FAST PAGE DRAM, 60 ns, PDSO40 |
| 封裝： | 0.400 INCH, TSOP2-44/40 |
| 文件頁數(shù)： | 7/17頁 |
| 文件大?。?/td> | 160K |
| 代理商： | IS41C16257-60TI |
IS41C16257
IS41LV16257
Integrated Silicon Solution, Inc. — 1-800-379-4774
DR004-1B
05/24/99
7
ISSI
AC CHARACTERISTICS
(1,2,3,4,5,6)
(Recommended Operating Conditions unless
otherwise noted.)
-35
-60
Symbol
Parameter
Min. Max.
Min. Max.
Units
t
RC
t
RAC
t
CAC
t
AA
t
RAS
t
RP
t
CAS
t
CP
t
CSH
t
RCD
t
ASR
t
RAH
t
ASC
t
CAH
t
AR
Random READ or WRITE Cycle Time
Access Time from
RAS
(6, 7)
Access Time from
CAS
(6, 8, 15)
Access Time from Column-Address
(6)
RAS
Pulse Width
RAS
Precharge Time
CAS
Pulse Width
(26)
CAS
Precharge Time
(9, 25)
CAS
Hold Time
(21)
RAS
to
CAS
Delay Time
(10, 20)
Row-Address Setup Time
Row-Address Hold Time
Column-Address Setup Time
(20)
Column-Address Hold Time
(20)
Column-Address Hold Time
(referenced to
RAS
)
60
—
—
—
35
20
6
5
35
11
6
0
6
30
—
35
10
18
10K
—
10K
—
—
28
—
—
—
—
—
110
—
—
—
60
40
10
10
60
20
— 0
10
0
10
40
—
60
15
30
10K
—
10K
—
—
45
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
— ns
ns
ns
ns
ns
—
—
—
—
t
RAD
t
RAL
t
RPC
t
RSH
t
CLZ
t
CRP
t
OD
t
OE
t
OEHC
t
OEP
t
OES
t
RCS
t
RRH
RAS
to Column-Address Delay Time
(11)
Column-Address to
RAS
Lead Time
RAS
to
CAS
Precharge Time
RAS
Hold Time
(27)
CAS
to Output in Low-Z
(15, 29)
CAS
to
RAS
Precharge Time
(21)
Output Disable Time
(19, 28, 29)
Output Enable Time
(15, 16)
OE
HIGH Hold Time from
CAS
HIGH
OE
HIGH Pulse Width
OE
LOW to
CAS
HIGH Setup Time
Read Command Setup Time
(17, 20)
Read Command Hold Time
(referenced to
RAS
)
(12)
Read Command Hold Time
(referenced to
CAS
)
(12, 17, 21)
Write Command Hold Time
(17, 27)
Write Command Hold Time
(referenced to
RAS
)
(17)
Write Command Pulse Width
(17)
WE
Pulse Widths to Disable Outputs
Write Command to
RAS
Lead Time
(17)
Write Command to
CAS
Lead Time
(17, 21)
Write Command Setup Time
(14, 17, 20)
Data-in Hold Time (referenced to
RAS
)
12
18
0
8
3
5
3
—
10
10
5
0
0
20
—
—
—
—
—
15
10
—
—
—
—
—
15
30
0
15
3
5
3
—
10
10
5
0
0
30
—
—
—
—
—
15
15
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RCH
0
—
0
—
ns
t
WCH
t
WCR
5
—
—
10
50
—
—
ns
ns
30
t
WP
t
WPZ
t
RWL
t
CWL
t
WCS
t
DHR
5
—
—
—
—
—
—
10
10
15
15
0
40
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
10
8
8
0
30
(Continued)
相關PDF資料 |
PDF描述 |
|---|---|
| IS41LV16257-35K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257-35KI | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257-35T | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257-35TI | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257-60K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS41C16257A-35KI | 制造商:Integrated Silicon Solution Inc 功能描述:256K X 16 FAST PAGE DRAM, 35 ns, PDSO40 |
| IS41C16257C | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4Mb DRAM WITH FAST PAGE MODE |
| IS41C16257C-35TLI | 功能描述:動態(tài)隨機存取存儲器 4M 5V FastPageMode 35ns, 40 pin TSOP II RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS41C16257C-35TLI-TR | 功能描述:動態(tài)隨機存取存儲器 4M,5V,Fast Page Mode 動態(tài)隨機存取存儲器,Async,35ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS41C1664-30T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K x 16 bit Dynamic RAM with EDO Page Mode |
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