參數(shù)資料
型號： IRLW640
廠商： Fairchild Semiconductor Corporation
英文描述： ADVANCED POWER MOSFET
中文描述： 先進的功率MOSFET
文件頁數(shù)： 2/7頁
文件大小： 227K
代理商： IRLW640
IRLW/I640A
200
--
1.0
--
--
--
--
--
0.17
--
--
--
--
--
200
95
11
8
46
15
40
6.8
18.6
--
--
2.0
100
-100
10
100
0.18
--
1705
250
120
30
25
100
40
56
--
--
13.3
1310
--
--
--
224
1.55
18
63
1.5
--
--
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=0.3mH, I
AS
=18A, V
DD
=50V, R
G
=27
, Starting T
J
=25
°
C
(3) I
SD
≤
18A, di/dt
≤
260A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
=25
°
C
(4) Pulse Test: Pulse Width = 250
μ
s, Duty Cycle
≤
2%
(5) Essentially Independent of Operating Temperature
2
1&+$11(/
32:(5 026)(7
Electrical Characteristics
(T
C
=25
°
C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( Miller ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
°
C
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
μ
A
I
D
=250
μ
A
See Fig 7
V
DS
=5V,I
D
=250
μ
A
V
GS
=20V
V
GS
=-20V
V
DS
=200V
V
DS
=160V,T
C
=125
°
C
V
GS
=5V,I
D
=9A
(4)
V
DS
=40V,I
D
=9A
(4)
V
DD
=100V,I
D
=18A,
R
G
=4.6
See Fig 13
(4) (5)
V
DS
=160V,V
GS
=5V,
I
D
=18A
See Fig 6 & Fig 12
(4) (5)
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
(1)
Diode Forward Voltage
(4)
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
°
C,I
S
=18A,V
GS
=0V
T
J
=25
°
C,I
F
=18A
di
F
/dt=100A/
μ
s
(4)
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