參數(shù)資料
型號(hào)： IRLU024NPBF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 3/10頁
文件大小： 304K
代理商： IRLU024NPBF
IRLR/U024NPbF
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
––– –––
p-n junction diode.
VSD
Diode Forward Voltage
–––
1.3
V
TJ = 25°C, IS = 11A, VGS = 0V
trr
Reverse Recovery Time
–––
60
90
ns
TJ = 25°C, IF = 11A
Qrr
Reverse RecoveryCharge
–––
130
200
nC
di/dt = 100A/s
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
17
72
A
VDD = 25V, starting TJ = 25°C, L = 790H
RG = 25, IAS = 11A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width ≤ 300s; duty cycle ≤ 2%.
Uses IRLZ24N data and test conditions.
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
ISD ≤ 11A, di/dt ≤ 290A/s, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
V
VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.061 –––
V/°C Reference to 25°C, ID = 1mA
–––
––– 0.065
VGS = 10V, ID = 10A
–––
––– 0.080
VGS = 5.0V, ID = 10A
–––
––– 0.110
VGS = 4.0V, ID = 9.0A
VGS(th)
Gate Threshold Voltage
1.0
–––
2.0
V
VDS = VGS, ID = 250A
gfs
Forward Transconductance
8.3
–––
S
VDS = 25V, ID = 11A
–––
25
A
VDS = 55V, VGS = 0V
–––
250
VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
100
nA
VGS = 16V
Gate-to-Source Reverse Leakage
–––
––– -100
VGS = -16V
Qg
Total Gate Charge
–––
15
ID = 11A
Qgs
Gate-to-Source Charge
–––
3.7
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
8.5
VGS = 5.0V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
7.1
–––
VDD = 28V
tr
Rise Time
–––
74
–––
ns
ID = 11A
td(off)
Turn-Off Delay Time
–––
20
–––
RG = 12, VGS = 5.0V
tf
Fall Time
–––
29
–––
RD = 2.4, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
480
–––
VGS = 0V
Coss
Output Capacitance
–––
130
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
61
–––
= 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
IGSS
S
D
G
LS
InternalSourceInductance
–––
7.5
–––
RDS(on)
StaticDrain-to-SourceOn-Resistance
LD
InternalDrainInductance
4.5
IDSS
Drain-to-SourceLeakageCurrent
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