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參數(shù)資料
| 型號： | IRLR8103 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 89A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 89A條（丁）|對252AA |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 38K |
| 代理商： | IRLR8103 |
www.irf.com
1
IRLR8103/IRLR8503
IRLR8103/IRLR8503
Provisional Data Sheet
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
≥
10V)
Pulsed Drain Current
Power Dissipation
Symbol
V
DS
V
GS
I
D
IRLR8103
IRLR8503
Units
V
30
±20
T
A
= 25°C
T
L
= 90°C
89
61
350
89
42
49
34
196
62
30
A
I
DM
P
D
T
A
= 25°C
T
L
= 90°C
W
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
T
J
,
T
STG
I
S
I
SM
–55 to 150
°C
A
89
350
49
196
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current
applications
Description
These new devices employ advanced HEXFET
power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge. The reduced conduction
and switching losses make them ideal for high efficiency
DC-DC converters that power the latest generation of
microprocessors.
Both the IRLR8103 and IRLR8503 have been optimized
and are 100% tested for all parameters that are critical in
synchronous buck converters including R
, gate charge
and Cdv/dt-induced turn-on immunity. The IRLR8103 offers
particulary low R
and high Cdv/dt immunity for
synchronous FET applications. The IRLR8503 offers an
extremely low combination of Q
sw
& R
DS(on)
for reduced
losses in control FET applications.
The package is designed for vapor phase, infrared,
convection, or wave soldering techniques. Power
dissipation of greater than 80W is possible in a typical PCB
mount application.
HEXFET
Chipset for DC-DC Converters
IRLR8103
30V
6 m
45 nC
20.3 nC
23 nC
IRLR8503
30V
12 m
15 nC
5.4 nC
23 nC
V
DS
R
DS
(on)
Q
G
Q
sw
Q
oss
Absolute Maximum Ratings
Parameter
Maximum Junction-to-Ambient PCB
Maximum Junction-to-Case
Max.
50
Units
°C/W
°C/W
R
θ
JA
R
θ
JC
1.4
2.0
Thermal Resistance
DEVICE RATINGS (typ.)
S
D
G
D-Pak
Revised 1/13/00
PD - 93839
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLR8103TR | 功能描述:MOSFET N-CH 30V 89A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRLR8103TRL | 功能描述:MOSFET N-CH 30V 89A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRLR8103TRR | 功能描述:MOSFET N-CH 30V 89A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRLR8103V | 制造商:International Rectifier 功能描述:MOSFET N D-PAK 制造商:Int'L Rectifier 功能描述:Trans MOSFET N-CH 30V 91A 3-Pin(2+Tab) DPAK T/R |
| IRLR8103VHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 91A 3-Pin(2+Tab) DPAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 91A 3PIN DPAK - Rail/Tube |
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