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參數(shù)資料
| 型號(hào)： | IRLS610A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 2.5A I(D) | TO-220F |
| 中文描述： | 晶體管| MOSFET的| N溝道| 200伏五（巴西）直| 2.5AI（四）|至220F |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 267K |
| 代理商： | IRLS610A |
IRLS610A
BV
DSS
= 200 V
R
DS(on)
= 0.046
I
D
= 2.5 A
200
2.5
1.6
12
±
20
20
2.9
1.9
5.0
19
0.15
- 55 to +150
300
!
Avalanche Rugged Technology
!
Rugged Gate Oxide Technology
!
Lower Input Capacitance
!
Improved Gate Charge
!
Extended Safe Operating Area
!
Lower Leakage Current : 10
μ
A (Max.) @ V
DS
= 200V
!
Lower R
DS(ON)
: 1.185
(Typ.)
Advanced Power MOSFET
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
℃
)
Continuous Drain Current (T
C
=100
℃
)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
②
Avalanche Current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
℃
)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8
＂
from case for 5-seconds
③
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
℃
A
℃
TO-220F
1.Gate 2. Drain 3. Source
3
2
1
6.6
62.5
--
--
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
θ
JC
R
θ
JA
Characteristic
Max.
Units
Symbol
Typ.
o
C/W
Rev. A
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