參數(shù)資料
型號： IRLR3705Z
廠商： International Rectifier
英文描述： Specifically designed for Automotive applications,this HEXFET Power MOSFET
中文描述： 專為汽車應(yīng)用中，這HEXFET功率MOSFET
文件頁數(shù)： 2/11頁
文件大?。?/td> 286K
代理商： IRLR3705Z
2
www.irf.com
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
Min.
55
–––
–––
–––
–––
1.0
89
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.053
–––
6.5
8.0
–––
11
–––
12
–––
3.0
–––
–––
–––
20
–––
250
–––
200
–––
-200
44
66
13
–––
22
–––
17
–––
150
–––
33
–––
70
–––
4.5
–––
V
V/°C
m
V
GS(th)
gfs
I
DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
V
S
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
ns
Between lead,
nH
6mm (0.25in.)
from package
L
S
Internal Source Inductance
–––
7.5
–––
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Source-Drain Ratings and Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
2900
420
230
1550
320
500
–––
–––
–––
–––
–––
–––
pF
Min.
–––
Typ. Max. Units
–––
42
A
–––
–––
360
–––
–––
–––
–––
21
14
1.3
42
28
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 16V
V
GS
= -16V
I
D
= 42A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 42A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
DS
= 44V
V
GS
= 5.0V
V
DD
= 28V
I
D
= 42A
R
G
= 4.2
Conditions
V
GS
= 5.0V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 42A, V
GS
= 0V
T
J
= 25°C, I
F
= 42A, V
DD
= 28V
di/dt = 100A/μs
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 42A
V
GS
= 5.0V, I
D
= 34A
V
GS
= 4.5V, I
D
= 21A
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