參數(shù)資料
型號(hào)： IRLR120N
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 100V N-Channel Power MOSFET(漏源電壓為100V的N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
中文描述： 8.4 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： DPAK-3
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 229K
代理商： IRLR120N
IRLR120N
BV
DSS
= 100 V
R
DS(on)
= 0.22
I
D
= 8.4 A
100
8.4
5
29
±
20
94
8.4
3.5
6.5
2.5
35
0.28
- 55 to +150
300
3.5
50
110
--
--
--
1
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10
μ
A (Max.) @ V
DS
= 100V
Lower R
DS(ON)
: 0.176
(Typ.)
$GYDQFHG 3RZHU 026)(7
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θ
JC
R
θ
JA
R
θ
JA
°
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
°
C)
Continuous Drain Current (T
C
=100
°
C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (T
A
=25
°
C)
Total Power Dissipation (T
C
=25
°
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
°
C
A
°
C
*
D-PAK
1. Gate 2. Drain 3. Source
1
2
3
I-PAK
1
3
2
1999 Fairchild Semiconductor Corporation
Rev. B
相關(guān)PDF資料
PDF描述
IRLR130A ADVANCED POWER MOSFET
IRLU130 Advanced Power MOSFET
IRLU130A Advanced Power MOSFET
IRLRU130A Advanced Power MOSFET
IRLR220A ADVANCED POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRLR120NHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 10A 3PIN DPAK - Rail/Tube
IRLR120NPBF 功能描述:MOSFET 100V 1 N-CH HEXFET 185mOhms 13.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLR120NPBF 制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes
IRLR120NTR 制造商:International Rectifier 功能描述:Single N-Channel 100 V 48 W 20 nC Hexfet Power Mosfet Surface Mount - TO-252AA
IRLR120NTRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 10A 3PIN DPAK - Tape and Reel
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