- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379241 > IRLU130A (FAIRCHILD SEMICONDUCTOR CORP) Advanced Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | IRLU130A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 13 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | IPAK-3 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 267K |
| 代理商： | IRLU130A |
IRLR/U130A
BV
DSS
= 100 V
R
DS(on)
= 0.12
I
D
= 13 A
100
13
8
45
±
20
225
13
4.6
6.5
2.5
46
0.37
- 55 to +150
300
2.7
50
110
--
--
--
1
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10
μ
A (Max.) @ V
DS
= 100V
Lower R
DS(ON)
: 0.101
(Typ.)
$GYDQFHG 3RZHU 026)(7
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θ
JC
R
θ
JA
R
θ
JA
°
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
°
C)
Continuous Drain Current (T
C
=100
°
C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (T
A
=25
°
C)
Total Power Dissipation (T
C
=25
°
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
°
C
A
°
C
*
D-PAK
1. Gate 2. Drain 3. Source
1
2
3
I-PAK
1
3
2
1999 Fairchild Semiconductor Corporation
Rev. B
相關PDF資料 |
PDF描述 |
|---|---|
| IRLRU130A | Advanced Power MOSFET |
| IRLR220A | ADVANCED POWER MOSFET |
| IRLU220A | ADVANCED POWER MOSFET |
| IRLRU220A | Advanced Power MOSFET |
| IRLR220 | 200V N-Channel Power MOSFET(漏源電壓為200V的N溝道增強型功率MOS場效應管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRLU130ATU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLU210 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 2A I(D) | TO-251 |
| IRLU210A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET |
| IRLU210ATU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLU211 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2A I(D) | TO-251 |
發(fā)布緊急采購，3分鐘左右您將得到回復。