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參數(shù)資料
| 型號： | IRLL3303PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 174K |
| 代理商： | IRLL3303PBF |
IRLL3303PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
30
–––
––– 0.034 –––
–––
––– 0.031
–––
––– 0.045
1.0
–––
5.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
34
–––
4.4
–––
10
–––
7.2
–––
22
–––
33
–––
28
–––
840
–––
340
–––
170
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 4.6A
V
GS
= 4.5V, I
D
= 2.3A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 10V, I
D
= 2.3A
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= -16V
V
GS
= 16V
I
D
= 4.6A
V
DS
= 24V
V
GS
= 10V, See Fig. 6 and 9
V
DD
= 15V
I
D
= 4.6A
R
G
= 6.2
R
D
= 3.2
,
See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
–––
–––
25
250
-100
100
50
6.5
16
–––
–––
–––
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
μA
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 4.6A, V
GS
= 0V
T
J
= 25°C, I
F
= 4.6A
di/dt = 100A/μs
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
65
160
1.3
98
240
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
37
0.91
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
4.6A, di/dt
≤
110A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
V
DD
= 15V, starting T
J
= 25°C, L = 13mH
R
G
= 25
, I
AS
= 4.6A. (See Figure 12)
Rev. #
Parameters
V
GS(th)
(Max.)
V
GS
(Max.)
Old spec.
2.5V
±20
New spec.
No spec.
±16
Comments
Revision Date
11/1/96
11/1/96
1
1
Removed V
GS(th)
(Max). Specification
Decrease V
GS
(Max). Specification
Specification changes
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IRLL3303PBF-EL | 制造商:International Rectifier 功能描述: |
| IRLL3303TR | 功能描述:MOSFET N-CH 30V 4.6A SOT223 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRLL3303TRPBF | 功能描述:MOSFET MOSFT 30V 4.6A 31mOhm 34nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLL3303TRPBF-CUT TAPE | 制造商:IR 功能描述:Single N-Channel 55 V 2.1 W 34 nC Hexfet Power Mosfet Surface Mount - SOT-223-3 |
| IRLM014A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.8A I(D) | SOT-223 |
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