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參數(shù)資料
| 型號(hào)： | IRLML2502PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 190K |
| 代理商： | IRLML2502PBF |
Parameter
Typ.
75
Max.
100
Units
R
θ
JA
www.irf.com
Maximum Junction-to-Ambient
HEXFET Power MOSFET
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET
power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3
, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Thermal Resistance
V
DSS
= 20V
R
DS(on)
= 0.045
Ultra Low On-Resistance
N-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
Lead-Free
11/8/04
1
Parameter
Max.
20
4.2
3.4
33
1.25
0.8
0.01
± 12
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
W/°C
V
°C
V
GS
T
J,
T
STG
-55 to + 150
Micro3
D
S
G
3
1
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLML2502PBF_12 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Ultra Low On-Resistance, N-Channel MOSFET, SOT-23 Footprint |
| IRLML2502TR | 功能描述:MOSFET N-CH 20V 4.2A SOT-23 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRLML2502TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 4.2A 3-Pin Micro T/R |
| IRLML2502TRPBF | 功能描述:MOSFET MOSFT 20V 4.2A 45mOhm 8nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLML2502TRPBF | 制造商:International Rectifier 功能描述:MOSFET |
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