參數(shù)資料
型號(hào)： IRLL110PBF
廠商： International Rectifier
英文描述： HEXFET㈢ Power MOSFET
中文描述： ㈢的HEXFET功率MOSFET
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 212K
代理商： IRLL110PBF
Parameter
Max.
1.5
0.93
12
3.1
2..0
0.025
0.017
-/+10
50
1.5
0.31
5.5
-55 to + 150
300 (1.6mm from case)
Units
I
D
@ Tc = 25°C
I
D
@ Tc = 100°C
I
DM
P
D
@Tc = 25°C
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 5.0 V
Continuous Drain Current, V
GS
@ 5.0 V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldewring Temperature, for 10 seconds
W
W/°C
V
mJ
A
mJ
V/ns
°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
IRLL110PbF
HEXFET
Power MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
RDS(on)Specified at VGS= 4V & 5V
Fast Switching
Lead-Free
PD - 95222
S
D
G
V
DSS
= 100V
R
DS(on)
= 0.54
I
D
= 1.5A
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infra red, or wave soldering techniques. Its
unique package design allows for easy automatic pick-and-
place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of
grreater than 1.25W is possible in a typical surface mount
application.
Absolute Maximum Ratings
04/27/04
Description
SOT-223
** When mounted on 1'' square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
www.irf.com
Parameter
Typ.
–––
–––
Max.
40
60
Units
R
θ
JC
R
θ
JA
Junction-to-PCB
Junction-to-Ambient. (PCB Mount)**
Thermal Resistance
°C/W
A
1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRLL110PBFTR 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R
IRLL110TR 功能描述:MOSFET N-Chan 100V 1.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLL110TRPBF 功能描述:MOSFET N-Chan 100V 1.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLL1503TR 功能描述:MOSFET N-CH 30V SOT223 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRLL1905 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 1.6A I(D) | TO-220AB
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